
\section{Problem 1}
	\subsection{Part A} From the example_netlist1.lis file, 603.3659mV.\\
%! include <example_netlist1.sp>

    	\subsection{Part B} The $\gamma$ effect parameter is 1.0249
	for an nmos mosfet (from the example_netlist1.sp file).
   
	\subsection{Part C} As $V_{sb}$ increases, the depth of the
	depletion region increases, exposing more of the fixed
	acceptor ions in the substrate of the wafer. The net effect of
	this is to increase the threshold voltage to account for the
	extra charge in the depletion region and thus the decreased
	charge density flowing through the channel. $V_{sb}$ can
	increase when several MOS devices are connected in series.

\section{Problem 2}

	\subsection{Part A} $V_{IL}=0V$, $V_{IH}=5V$.
	\begin{enumerate} 

	\item To find $V_{OH}$, we apply $V_{IL}$ to the gate
	$V_{IN}$.  The transistor goes into cut-off mode and
	$V_{OH}=5V$.  To find $V_{OL}$, we apply $V_{IH}$ to the gate
	$V_{IN}$. The transistor goes into linear mode... so we find
	the voltage across the NMOSFET using the fact that we know the
	resistance of the pullup resistor to calculate the voltage
	here from the current.

	 \item To find $V_{OH}$, we apply $V_{IL}$ to the gate
	$V_{IN}$.  The lower transistor goes into cut-off mode and the
	upper transistor goes into saturation mode. This sends
	$V_{DD}$ through the output, so $V_{OH}=5V$. To find $V_{OL}$,
	we apply $V_{IH}$ to the gate $V_{IN}$. 

	\item To find $V_{OH}$, we apply $V_{IL}$ to the gate $V_{IN}$.
	The PMOSFET goes into linear mode and the NMOSFET goes into cutoff
	mode, making $V_{OH}=5V$.   
	To find $V_{OL}$, we apply $V_{IH}$ to the gate $V_{IN}$. The NMOSFET   
	\subsection{Part B}
