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\title {\vspace{-2in}
	{\LARGE 3.43 Term Project}
	\vspace{.5in}\\
        {\Huge\bf Advanced Bipolar Transistors}
}

\author{\vspace{.5in}\\
	{\large\bf Sang H. Ahn}\\
	{\large\bf Weize Chen}
	\vspace{2.5in}\\
	{\large Department of Materials Science and Engineering}\\
	{\large Massachusetts Institute of Technology}
	\vspace{-3in}\\
}

\date{November 22, 1994}

\begin{document}
\maketitle
\newpage
\pagenumbering{roman}
\tableofcontents
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\listoffigures
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\listoftables
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\pagenumbering{arabic}

\chapter{Ooga Booga}\label{ch:xyz}

\section{INTRODUCTION}

Bipolar junction transistors~(BJTs) were the first ...

Compared with field effect devices, the bipolar structure provide a
number of inherent advantages\mbox{\cite{pa:bt,pa:gh}}:

\subsection{Advanced Si Bipolar Technologies}


In the midst of vigorous challenge from CMOS, continuous progress has
been made ...

Figure~\ref{fig:conventional} and figure~\ref{fig:advanced}
show the device cross sections for a conventional and advanced bipolar
transistor, repectively\cite{tn:bt}.

\begin{figure}
\vspace{2.5in}
\caption{Cross section of a conventional Si bipolar transistor and
device layout\protect\scite{tn:bt}.}
\label{fig:conventional}
\vspace{3in}
\caption{Cross section of an advanced Si bipolar transistor featuring
double polysilicon self-aligned process and trench isolation and the
associated device layout\protect\cite{TEST}.}
\label{fig:advanced} 
\end{figure}

Significant improvements ...

\end{document}
