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| United States Patent | 5,440,669 |
| Rakuljic ,   et al. | August 8, 1995 |
A new type of holographic recording in photorefractive crystals is disclosed, termed orthogonal data storage, in which counterpropagating, reflection mode holograms are wavelength multiplexed to form gratings lying along a common axis. It is shown that this configuration provides substantial improvements in data storage capacity in comparison to prior art systems and that higher coupling coefficients are achieved. In consequence, not only storage of data but a wide range of other devices including wavelength selective filters, lenses and optical correlation systems are disclosed. Further, methods of writing and processing metastable images are disclosed which substantially improve the strength of the gratings that are permanently developed in the medium. These methods include advantageous use of electrical potentials and photovoltaic properties, together with different interrelationships during processing.
| Inventors: | Rakuljic; George A. (Santa Monica, CA); Yariv; Amnon (San Marino, CA) |
| Assignee: | Accuwave Corporation (Santa Monica, CA) |
| Appl. No.: | 908298 |
| Filed: | July 2, 1992 |
| Current U.S. Class: | 359/7; 359/1; 359/15; 359/22 |
| Intern'l Class: | G02B 005/32; G03H 001/18; G03H 001/26 |
| Field of Search: | 359/1,3,4,7,10,11,22,24,35,558,566,569,575,245 365/106,109,117,124,125,215,216 |
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| Foreign Patent Documents | |||
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Gu et al., Journal of the Optical Society of American B: Optical Physics, vol. 7, No. 12, Dec. 1990, pp. 2339-2346. "Reconfigurable interconnections using photorefractive holograms," S. Wu et al., Applied Optics, vol. 29, No. 8, Mar. 10, 1990, pp. 1118-1125. "Holographic Storage in Electrooptic Crystals. I. Steady State," N. V. Kukhtarev et al., Ferroelectrics, vol. 22, 1979, pp. 949-960. |
__________________________________________________________________________
Glossary of Terms
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K Grating wavevector
K Magnitude of the grating wavevector
.LAMBDA.
Grating wavelength
.lambda.
Wavelength of incident radiation
N.sub.D
Density of donor sites
N.sub.D .sup.+
Density of acceptor sites (traps)
n Density of electrons
N.sub.A
Density of non-photoactive compensatory ions
N.sub.0
Total dopant density
J Current density
E Electric field
I Intensity of light (spatially varying)
m Modulation index
.rho.
Charge density
.beta.
Dark decay (thermal decay) constant
.gamma.
Electron-trap recombination rate
.mu. Mobility of the electrons
.mu..sub.A
Mobility of ions
k.sub.B
Boltzmann's constant
s Photoionization cross-section
.epsilon.
Permittivity of the material
h.omega.
Energy per photon of the incident light
.sigma..sub.p
Photoconductivity
.sigma..sub.d
Dark conductivity (generally much less than the photoconductivity)
T Temperature in degrees K
t Time
E.sub.d
Diffusion field at ambient temperature
E.sub.d .sup.(T)
Diffusion field at elevated fixing temperature T.
E.sub.q
Limiting space charge field (maximum space charge field that can be
supported in the crystal)
E.sub.0
DC electric field
E.sub.1
Sinusoidal electric field variation, which is the space-charge
field
.kappa.
Coupling constant
l Thickness of the photorefractive crystal
J.sub.PV
Photovoltaic current density
E.sub.PV
Photovoltaic field
.kappa..sub.PV
Photovoltaic constant
.alpha.
Absorption constant of the crystal
n.sub.0
Bulk index of refraction
n.sub.1
Sinusoidal index of refraction modulation due to the
photorefractive
effect
e Charge of the electron
r.sub.eff
Effective electro-optic coefficient
__________________________________________________________________________
TABLE 1
__________________________________________________________________________
Electronic (Metastable) Gratings
Reflection vs. Transmission Mode
N.sub.A0
E.sub.PV
(cm.sup.-3)
(kV/cm)
Transmission
Reflection
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.LAMBDA.g 1.0 .mu.m 0.109 .mu.m
K 6.28 .times. 10.sup.4 cm.sup.-1
5.78 .times. 10.sup.5 cm.sup.-1
E.sub.d 1.59 kV/cm (20.degree. C.)
14.6 kV/cm (20.degree. C.)
E.sub.d .sup.T 2.35 kV/cm (160.degree. C.)
21.6 kV/cm (160.degree. C.)
E.sub.q .apprxeq. E.sub.q .sup.A
10.sup.17
5 89.9 kV/cm 9.77 kV/cm
(N.sub.0 >> N.sub.A0)
10.sup.18
50 899 kV/cm 97.7 kV/cm
E.sub.1 .sup.open
10.sup.17
5 1.56 kV/cm 5.73 kV/cm
10.sup.18
50 1.58 kV/cm 11.6 kV/cm
E.sub.1 .sup.short
10.sup.17
5 5.16 kV/cm 6.19 kV/cm
10.sup.18
50 49.9 kV/cm 45.3 kV/cm
__________________________________________________________________________
TABLE 2
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Theoretical Fixing and Developing Efficiency
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N.sub.A0 = 10.sup.17 cm.sup.-3
Transmission Reflection
E.sub.PV (kV/cm)
1 5 10 1 5 10
__________________________________________________________________________
.gamma.FIX
Short
SEQ
0.020 0.056
0.108
0.187
0.197
0.226
.gamma.FIX
Short
SIM
0.536 1.000
1.000
0.238
0.244
0.262
.gamma.dev
Short
n/a
0.017 0.017
0.017
0.599
0.599
0.599
.gamma.dev
Open
n/a
0.021 0.057
0.110
0.600
0.620
0.672
.gamma.Final
Sh,Sh
SEQ
0.0003
0.001
0.0019
0.112
0.118
0.135
.gamma.Final
Sh,Sh
SIM
0.009 0.017
0.017
0.142
0.146
0.157
.gamma.Final
Sh,Op
SEQ
0.0004
0.003
0.012
0.112
0.122
0.152
.gamma.Final
Sh,Op
SIM
0.011 0.057
0.110
0.143
0.151
0.176
__________________________________________________________________________
N.sub.A0 = 10.sup.18 cm.sup.-3
Transmission Reflection
E.sub.PV (kV/cm)
10 50 100 10 50 100
__________________________________________________________________________
.gamma.FIX
Short
SEQ
0.0112
0.0554
0.111
0.129
0.380
0.737
.gamma.FIX
Short
SIM
1.000 1.000
1.000
0.496
1.000
1.000
.gamma.dev
Short 0.0018
0.0018
0.0018
0.130
0.130
0.130
.gamma.dev
Open 0.011 0.055
0.110
0.157
0.424
0.672
.gamma.Final
Sh,Sh
SEO
2 .times. 10.sup.-5
0.0001
0.0002
0.017
0.049
0.096
.gamma.Final
Sh,Sh
SIM
0.0018
0.0018
0.0018
0.065
0.130
0.130
.gamma.Final
Sh,Op
SEQ
0.00013
0.0031
0.0122
0.020
0.161
0.495
.gamma.Final
Sh,Op
SIM
0.011 0.055
0.110
0.078
0.424
0.672
__________________________________________________________________________
TABLE 3
__________________________________________________________________________
Measured Results
__________________________________________________________________________
Reflection Mode (Fe-doped LiNbO.sub.3)
Dopant Short/Open
Conc .lambda.(nm)
(Fixing)
Sim/Seq
.eta.:Prefix
.eta.:Fixed
.gamma..sub.Conv
__________________________________________________________________________
0.05% Fe 640 Short SEQ 50% 43% 86%
0.05% Fe 640 Short SIM -- >50% --
__________________________________________________________________________
Transmission Mode (Fe-doped LiNbO.sub.3 and LiTaO.sub.3)
Dopant Short/Open
Conc Crystal
.lambda.(nm)
(Fixing)
.eta.:Prefix
.eta.:Fixed
.gamma..sub.Conv
__________________________________________________________________________
0.03% Fe
LiNbO.sub.3
640 Open/Open
0.64% 0.08% 12%
0.03% Fe
LiNbO.sub.3
640 Open/Short
0.64% 0.13% 20%
0.02% Fe
LiNbO.sub.3
640 Open/Open
0.61% 0.07% 12%
0.02% Fe
LiNbO.sub.3
640 Open/Short
0.064%
0.014% 22%
0.05% Fe
LiTaO.sub.3
488 Open/Open
6.0% 0.033% 0.56%
0.05% Fe
LiTaO.sub.3
488 Open/Short
8.7% 0.36% 4.14%
0.05% Fe
LiTaO.sub.3
488 Open 6.0% (not fixed)
0.05% Fe
LiTaO.sub.3
488 Short 31.7% (not fixed)
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TABLE 4
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Signal-to-noise Ratio in Orthogonal Data Storage
Number of Channel Optical Signal-to
Holograms Separation (.ANG.)
Noise Ratio (dB)
______________________________________
2 10 44
4 10 44
8 10 43
16 10 33
32 5 24
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