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Class   216	ETCHING A SUBSTRATE: PROCESSES
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This Class 216 is considered to be an integral part of Class 156 (see the Class 156 schedule for the position of this Class in schedule hierarchy). This Class retains all pertinent definitions and class lines of Class 156.
	2	ETCHING OF SEMICONDUCTOR MATERIAL TO PRODUCE AN ARTICLE HAVING A NONELECTRICAL FUNCTION

3

FORMING OR TREATING JOSEPHSON JUNCTION ARTICLE

4

FORMING OR TREATING A SIGN OR MATERIAL USEFUL IN A SIGN

5

Sign or material is electroluminescent

6

FORMING OR TREATING MATERIAL USEFUL IN A CAPACITOR

7

FORMING OR TREATING FIBROUS ARTICLE OR FIBER REINFORCED COMPOSITE STRUCTURE

8

FORMING OR TREATING CYLINDRICAL OR TUBULAR ARTICLE HAVING PATTERN OR DESIGN ON ITS SURFACE

9

Forming or treating an embossing cylinder or tubular article

10

Forming or treating liquid transfer cylinder or tubular article (e.g., printing roll, etc.)

11

FORMING OR TREATING AN ARTICLE WHOSE FINAL CONFIGURATION HAS A PROJECTION

12

FORMING OR TREATING MASK USED FOR ITS NONETCHING FUNCTION (E.G., SHADOW MASK, X-RAY MASK, ETC.)

13

FORMING OR TREATING ELECTRICAL CONDUCTOR ARTICLE (E.G., CIRCUIT, ETC.)

14

Forming or treating lead frame or beam lead

15

Forming or treating a crossover

16

Forming or treating resistive material

17

Forming or treating of groove or through hole

18

Filling or coating of groove or through hole with a conductor to form an electrical interconnection

19

Filling or coating of groove or through hole in a conductor with an insulator

20

Adhesive or autogenous bonding of self-sustaining preforms (e.g., prefabricated base, etc.)

21

Repairing circuit

22

FORMING OR TREATING ARTICLE CONTAINING MAGNETICALLY RESPONSIVE MATERIAL

23

FORMING OR TREATING ARTICLE CONTAINING A LIQUID CRYSTAL MATERIAL

24

FORMING OR TREATING OPTICAL ARTICLE

25

Phosphor screen

26

Lens

27

FORMING OR TREATING THERMAL INK JET ARTICLE (E.G., PRINT HEAD, LIQUID JET RECORDING HEAD, ETC.)

28

FORMING OR TREATING AN ORNAMENTED ARTICLE

29

Wood surface treated or wood grain produced

30

Treating stone (e.g., marble, etc.)

31

Treating glass (e.g., mirror, etc.)

32

Treating elemental metal or alloy thereof

33

ADHESIVE OR AUTOGENOUS BONDING OF TWO OR MORE SELF-SUSTAINING PREFORMS WHEREIN AT LEAST TWO OF THE PREFORMS ARE NOT INTENDED TO BE REMOVED (E.G., PREFABRICATED BASE, ETC.)

34

Etching improves or promotes adherence of preforms being bonded

35

Bonding of preform of metal or an alloy thereof to a preform of a nonmetal

36

Removing at least one of the self-sustaining preforms or a portion thereof

37

ETCHING AND COATING OCCUR IN THE SAME PROCESSING CHAMBER

38

PLANARIZING A NONPLANAR SURFACE

39

FORMING GROOVE OR HOLE IN A SUBSTRATE WHICH IS SUBSEQUENTLY FILLED OR COATED

40

FORMING PATTERN USING LIFT OFF TECHNIQUE

41

MASKING OF A SUBSTRATE USING MATERIAL RESISTANT TO AN ETCHANT (I.E., ETCH RESIST)

42

Resist material applied in particulate form or spray

43

Adhesively bonding resist to substrate

44

Mechanically forming pattern into a resist

45

Mask is reusable (i.e., stencil)

46

Masking of sidewall

47

Mask is multilayer resist

48

Mask is exposed to nonimaging radiation

49

Mask resist contains organic compound

50

Mask resist contains a color imparting agent

51

Mask resist contains inorganic material

52

MECHANICALLY SHAPING, DEFORMING, OR ABRADING OF SUBSTRATE

53

Nongaseous phase etching

54

PATTERN OR DESIGN APPLIED BY TRANSFER

55

HEATING OR BAKING OF SUBSTRATE PRIOR TO ETCHING TO CHANGE THE CHEMICAL PROPERTIES OF SUBSTRATE TOWARD THE ETCHANT

56

ETCHING TO PRODUCE POROUS OR PERFORATED ARTICLE

57

GAS PHASE AND NONGASEOUS PHASE ETCHING ON THE SAME SUBSTRATE

58

GAS PHASE ETCHING OF SUBSTRATE

59

With measuring, testing, or inspecting

60

By optical means or of an optical property

61

By electrical means or of an electrical property

62

Irradiating, ion implanting, alloying, diffusing, or chemically reacting the substrate prior to etching to change properties of substrate toward the etchant

63

Application of energy to the gaseous etchant or to the substrate being etched

64

Etchant is devoid of chlorocarbon or fluorocarbon compound (e.g., C.F.C., etc.)

65

Using laser

66

Using ion beam, ultraviolet, or visible light

67

Using plasma

68

Using coil to generate the plasma

69

Using microwave to generate the plasma

70

Magnetically enhancing the plasma

71

Specific configuration of electrodes to generate the plasma

72

Etching a multiple layered substrate where the etching condition used produces a different etching rate or characteristic between at least two of the layers of the substrate

73

Etching vapor produced by evaporation, boiling, or sublimation

74

Etching inorganic substrate

75

Substrate contains elemental metal, alloy thereof, or metal compound

76

Etching of substrate containing at least one compound having at least one oxygen atom and at least one metal atom

77

Etching of substrate containing elemental aluminum, or an alloy or compound thereof

78

Etching of substrate containing elemental copper, or an alloy or compound thereof

79

Etching silicon containing substrate

80

Silicon containing substrate is glass

81

Etching elemental carbon containing substrate

83

NONGASEOUS PHASE ETCHING OF SUBSTRATE

84

With measuring, testing, or inspecting

85

By optical means or of an optical property

86

By electrical means or of an electrical property

87

Irradiating, ion implanting, alloying, diffusing, or chemically reacting the substrate prior to ethching to change properties of substrate toward the etchant

88

Using film of etchant between a stationary surface and a moving surface (e.g., chemical lapping, etc.)

89

Etchant contains solid particle (e.g., abrasive for polishing, etc.)

90

Relative movement between the substrate and a confined pool of etchant

91

Rotating, repeated dipping, or advancing movement of substrate

92

Projecting etchant against a moving substrate or controlling the angle or pattern projection of the etchant or controlling the angle or pattern of movement of the substrate

93

Recycling, regenerating, or rejunevating etchant

94

Etching using radiation (e.g., laser, electron-beam, ion-beam, etc.)

95

Substrate is multilayered

96

Etching inorganic substrate

97

Substrate is glass

98

Frosting glass

99

Substrate contains silicon or silicon compound

100

Substrate contains elemental metal, alloy thereof, or metal compound

101

Etching of a compound containing at least one oxygen atom and at least one metal atom

102

Metal is elemental aluminum, an alloy, or compound thereof

103

Etchant contains acid

104

Etchant contains fluoride ion

105

Metal is elemental copper, an alloy, or compound thereof

106

Etchant contains acid

107

Etchant contains fluoride ion

108

Etchant contains acid

109

Etchant contains fluoride ion

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