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[Search a list of Patent Appplications for class 438]  Class   438SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS
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[List of Patents for class 438 subclass 1]  1           HAVING BIOMATERIAL COMPONENT OR INTEGRATED WITH LIVING ORGANISM
[List of Patents for class 438 subclass 2]  2           HAVING SUPERCONDUCTIVE COMPONENT
[List of Patents for class 438 subclass 3]  3           HAVING MAGNETIC OR FERROELECTRIC COMPONENT
[List of Patents for class 438 subclass 4]  4           REPAIR OR RESTORATION
[List of Patents for class 438 subclass 5]  5           INCLUDING CONTROL RESPONSIVE TO SENSED CONDITION
[List of Patents for class 438 subclass 6]  6           Subclass 6 indent level is 1 Interconnecting plural devices on semiconductor substrate
[List of Patents for class 438 subclass 7]  7           Subclass 7 indent level is 1 Optical characteristic sensed
[List of Patents for class 438 subclass 8]  8           Subclass 8 indent level is 2 Chemical etching
[List of Patents for class 438 subclass 9]  9           Subclass 9 indent level is 3 Plasma etching
[List of Patents for class 438 subclass 10]  10           Subclass 10 indent level is 1 Electrical characteristic sensed
[List of Patents for class 438 subclass 11]  11           Subclass 11 indent level is 2 Utilizing integral test element
[List of Patents for class 438 subclass 12]  12           Subclass 12 indent level is 2 And removal of defect
[List of Patents for class 438 subclass 13]  13           Subclass 13 indent level is 2 Altering electrical property by material removal
[List of Patents for class 438 subclass 14]  14           WITH MEASURING OR TESTING
[List of Patents for class 438 subclass 15]  15           Subclass 15 indent level is 1 Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor
[List of Patents for class 438 subclass 16]  16           Subclass 16 indent level is 1 Optical characteristic sensed
[List of Patents for class 438 subclass 17]  17           Subclass 17 indent level is 1 Electrical characteristic sensed
[List of Patents for class 438 subclass 18]  18           Subclass 18 indent level is 2 Utilizing integral test element
[List of Patents for class 438 subclass 19]  19           HAVING INTEGRAL POWER SOURCE (E.G., BATTERY, ETC.)
[List of Patents for class 438 subclass 20]  20           ELECTRON EMITTER MANUFACTURE
[List of Patents for class 438 subclass 21]  21           MANUFACTURE OF ELECTRICAL DEVICE CONTROLLED PRINTHEAD
[List of Patents for class 438 subclass 22]  22           MAKING DEVICE OR CIRCUIT EMISSIVE OF NONELECTRICAL SIGNAL
[List of Patents for class 438 subclass 23]  23           Subclass 23 indent level is 1 Having diverse electrical device
[List of Patents for class 438 subclass 24]  24           Subclass 24 indent level is 2 Including device responsive to nonelectrical signal
[List of Patents for class 438 subclass 25]  25           Subclass 25 indent level is 3 Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor
[List of Patents for class 438 subclass 26]  26           Subclass 26 indent level is 1 Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor
[List of Patents for class 438 subclass 27]  27           Subclass 27 indent level is 2 Having additional optical element (e.g., optical fiber, etc.)
[List of Patents for class 438 subclass 28]  28           Subclass 28 indent level is 2 Plural emissive devices
[List of Patents for class 438 subclass 29]  29           Subclass 29 indent level is 1 Including integrally formed optical element (e.g., reflective layer, luminescent material, contoured surface, etc.)
[List of Patents for class 438 subclass 30]  30           Subclass 30 indent level is 2 Liquid crystal component
[List of Patents for class 438 subclass 31]  31           Subclass 31 indent level is 2 Optical waveguide structure
[List of Patents for class 438 subclass 32]  32           Subclass 32 indent level is 2 Optical grating structure
[List of Patents for class 438 subclass 33]  33           Subclass 33 indent level is 1 Substrate dicing
[List of Patents for class 438 subclass 34]  34           Subclass 34 indent level is 1 Making emissive array
[List of Patents for class 438 subclass 35]  35           Subclass 35 indent level is 2 Multiple wavelength emissive
[List of Patents for class 438 subclass 36]  36           Subclass 36 indent level is 1 Ordered or disordered
[List of Patents for class 438 subclass 37]  37           Subclass 37 indent level is 1 Graded composition
[List of Patents for class 438 subclass 38]  38           Subclass 38 indent level is 1 Passivating of surface
[List of Patents for class 438 subclass 39]  39           Subclass 39 indent level is 1 Mesa formation
[List of Patents for class 438 subclass 40]  40           Subclass 40 indent level is 2 Tapered etching
[List of Patents for class 438 subclass 41]  41           Subclass 41 indent level is 2 With epitaxial deposition of semiconductor adjacent mesa
[List of Patents for class 438 subclass 42]  42           Subclass 42 indent level is 1 Groove formation
[List of Patents for class 438 subclass 43]  43           Subclass 43 indent level is 2 Tapered etching
[List of Patents for class 438 subclass 44]  44           Subclass 44 indent level is 2 With epitaxial deposition of semiconductor in groove
[List of Patents for class 438 subclass 45]  45           Subclass 45 indent level is 1 Dopant introduction into semiconductor region
[List of Patents for class 438 subclass 46]  46           Subclass 46 indent level is 1 Compound semiconductor
[List of Patents for class 438 subclass 47]  47           Subclass 47 indent level is 2 Heterojunction
[List of Patents for class 438 subclass 48]  48           MAKING DEVICE OR CIRCUIT RESPONSIVE TO NONELECTRICAL SIGNAL
[List of Patents for class 438 subclass 49]  49           Subclass 49 indent level is 1 Chemically responsive
[List of Patents for class 438 subclass 50]  50           Subclass 50 indent level is 1 Physical stress responsive
[List of Patents for class 438 subclass 51]  51           Subclass 51 indent level is 2 Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor
[List of Patents for class 438 subclass 52]  52           Subclass 52 indent level is 2 Having cantilever element
[List of Patents for class 438 subclass 53]  53           Subclass 53 indent level is 2 Having diaphragm element
[List of Patents for class 438 subclass 54]  54           Subclass 54 indent level is 1 Thermally responsive
[List of Patents for class 438 subclass 55]  55           Subclass 55 indent level is 2 Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor
[List of Patents for class 438 subclass 56]  56           Subclass 56 indent level is 1 Responsive to corpuscular radiation (e.g., nuclear particle detector, etc.)
[List of Patents for class 438 subclass 57]  57           Subclass 57 indent level is 1 Responsive to electromagnetic radiation
[List of Patents for class 438 subclass 58]  58           Subclass 58 indent level is 2 Gettering of substrate
[List of Patents for class 438 subclass 59]  59           Subclass 59 indent level is 2 Having diverse electrical device
[List of Patents for class 438 subclass 60]  60           Subclass 60 indent level is 3 Charge transfer device (e.g., CCD, etc.)
[List of Patents for class 438 subclass 61]  61           Subclass 61 indent level is 2 Continuous processing
[List of Patents for class 438 subclass 62]  62           Subclass 62 indent level is 3 Using running length substrate
[List of Patents for class 438 subclass 63]  63           Subclass 63 indent level is 2 Particulate semiconductor component
[List of Patents for class 438 subclass 64]  64           Subclass 64 indent level is 2 Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor
[List of Patents for class 438 subclass 65]  65           Subclass 65 indent level is 3 Having additional optical element (e.g., optical fiber, etc.)
[List of Patents for class 438 subclass 66]  66           Subclass 66 indent level is 3 Plural responsive devices (e.g., array, etc.)
[List of Patents for class 438 subclass 67]  67           Subclass 67 indent level is 4 Assembly of plural semiconductor substrates
[List of Patents for class 438 subclass 68]  68           Subclass 68 indent level is 2 Substrate dicing
[List of Patents for class 438 subclass 69]  69           Subclass 69 indent level is 2 Including integrally formed optical element (e.g., reflective layer, luminescent layer, etc.)
[List of Patents for class 438 subclass 70]  70           Subclass 70 indent level is 3 Color filter
[List of Patents for class 438 subclass 71]  71           Subclass 71 indent level is 3 Specific surface topography (e.g., textured surface, etc.)
[List of Patents for class 438 subclass 72]  72           Subclass 72 indent level is 3 Having reflective or antireflective component
[List of Patents for class 438 subclass 73]  73           Subclass 73 indent level is 2 Making electromagnetic responsive array
[List of Patents for class 438 subclass 74]  74           Subclass 74 indent level is 3 Vertically arranged (e.g., tandem, stacked, etc.)
[List of Patents for class 438 subclass 75]  75           Subclass 75 indent level is 3 Charge transfer device (e.g., CCD, etc.)
[List of Patents for class 438 subclass 76]  76           Subclass 76 indent level is 4 Majority signal carrier (e.g., buried or bulk channel, peristaltic, etc.)
[List of Patents for class 438 subclass 77]  77           Subclass 77 indent level is 4 Compound semiconductor
[List of Patents for class 438 subclass 78]  78           Subclass 78 indent level is 4 Having structure to improve output signal (e.g., exposure control structure, etc.)
[List of Patents for class 438 subclass 79]  79           Subclass 79 indent level is 5 Having blooming suppression structure (e.g., antiblooming drain, etc.)
[List of Patents for class 438 subclass 80]  80           Subclass 80 indent level is 3 Lateral series connected array
[List of Patents for class 438 subclass 81]  81           Subclass 81 indent level is 4 Specified shape junction barrier (e.g., V-grooved junction, etc.)
[List of Patents for class 438 subclass 82]  82           Subclass 82 indent level is 2 Having organic semiconductor component
[List of Patents for class 438 subclass 83]  83           Subclass 83 indent level is 2 Forming point contact
[List of Patents for class 438 subclass 84]  84           Subclass 84 indent level is 2 Having selenium or tellurium elemental semiconductor component
[List of Patents for class 438 subclass 85]  85           Subclass 85 indent level is 2 Having metal oxide or copper sulfide compound semiconductive component
[List of Patents for class 438 subclass 86]  86           Subclass 86 indent level is 3 And cadmium sulfide compound semiconductive component
[List of Patents for class 438 subclass 87]  87           Subclass 87 indent level is 2 Graded composition
[List of Patents for class 438 subclass 88]  88           Subclass 88 indent level is 2 Direct application of electric current
[List of Patents for class 438 subclass 89]  89           Subclass 89 indent level is 2 Fusion or solidification of semiconductor region
[List of Patents for class 438 subclass 90]  90           Subclass 90 indent level is 2 Including storage of electrical charge in substrate
[List of Patents for class 438 subclass 91]  91           Subclass 91 indent level is 2 Avalanche diode
[List of Patents for class 438 subclass 92]  92           Subclass 92 indent level is 2 Schottky barrier junction
[List of Patents for class 438 subclass 93]  93           Subclass 93 indent level is 2 Compound semiconductor
[List of Patents for class 438 subclass 94]  94           Subclass 94 indent level is 3 Heterojunction
[List of Patents for class 438 subclass 95]  95           Subclass 95 indent level is 3 Chalcogen (i.e., oxygen (O), sulfur (S), selenium (Se), tellurium (Te)) containing
[List of Patents for class 438 subclass 96]  96           Subclass 96 indent level is 2 Amorphous semiconductor
[List of Patents for class 438 subclass 97]  97           Subclass 97 indent level is 2 Polycrystalline semiconductor
[List of Patents for class 438 subclass 98]  98           Subclass 98 indent level is 2 Contact formation (i.e., metallization)
[List of Patents for class 438 subclass 99]  99           HAVING ORGANIC SEMICONDUCTIVE COMPONENT
[List of Patents for class 438 subclass 100]  100           MAKING POINT CONTACT DEVICE
[List of Patents for class 438 subclass 101]  101           Subclass 101 indent level is 1 Direct application of electrical current
[List of Patents for class 438 subclass 102]  102           HAVING SELENIUM OR TELLURIUM ELEMENTAL SEMICONDUCTOR COMPONENT
[List of Patents for class 438 subclass 103]  103           Subclass 103 indent level is 1 Direct application of electrical current
[List of Patents for class 438 subclass 104]  104           HAVING METAL OXIDE OR COPPER SULFIDE COMPOUND SEMICONDUCTOR COMPONENT
[List of Patents for class 438 subclass 105]  105           HAVING DIAMOND SEMICONDUCTOR COMPONENT
[List of Patents for class 438 subclass 106]  106           PACKAGING (E.G., WITH MOUNTING, ENCAPSULATING, ETC.) OR TREATMENT OF PACKAGED SEMICONDUCTOR
[List of Patents for class 438 subclass 107]  107           Subclass 107 indent level is 1 Assembly of plural semiconductive substrates each possessing electrical device
[List of Patents for class 438 subclass 108]  108           Subclass 108 indent level is 2 Flip-chip-type assembly
[List of Patents for class 438 subclass 109]  109           Subclass 109 indent level is 2 Stacked array (e.g., rectifier, etc.)
[List of Patents for class 438 subclass 110]  110           Subclass 110 indent level is 1 Making plural separate devices
[List of Patents for class 438 subclass 111]  111           Subclass 111 indent level is 2 Using strip lead frame
[List of Patents for class 438 subclass 112]  112           Subclass 112 indent level is 3 And encapsulating
[List of Patents for class 438 subclass 113]  113           Subclass 113 indent level is 2 Substrate dicing
[List of Patents for class 438 subclass 114]  114           Subclass 114 indent level is 3 Utilizing a coating to perfect the dicing
[List of Patents for class 438 subclass 115]  115           Subclass 115 indent level is 1 Including contaminant removal or mitigation
[List of Patents for class 438 subclass 116]  116           Subclass 116 indent level is 1 Having light transmissive window
[List of Patents for class 438 subclass 117]  117           Subclass 117 indent level is 1 Incorporating resilient component (e.g., spring, etc.)
[List of Patents for class 438 subclass 118]  118           Subclass 118 indent level is 1 Including adhesive bonding step
[List of Patents for class 438 subclass 119]  119           Subclass 119 indent level is 2 Electrically conductive adhesive
[List of Patents for class 438 subclass 120]  120           Subclass 120 indent level is 1 With vibration step
[List of Patents for class 438 subclass 121]  121           Subclass 121 indent level is 1 Metallic housing or support
[List of Patents for class 438 subclass 122]  122           Subclass 122 indent level is 2 Possessing thermal dissipation structure (i.e., heat sink)
[List of Patents for class 438 subclass 123]  123           Subclass 123 indent level is 2 Lead frame
[List of Patents for class 438 subclass 124]  124           Subclass 124 indent level is 2 And encapsulating
[List of Patents for class 438 subclass 125]  125           Subclass 125 indent level is 1 Insulative housing or support
[List of Patents for class 438 subclass 126]  126           Subclass 126 indent level is 2 And encapsulating
[List of Patents for class 438 subclass 127]  127           Subclass 127 indent level is 1 Encapsulating
[List of Patents for class 438 subclass 128]  128           MAKING DEVICE ARRAY AND SELECTIVELY INTERCONNECTING
[List of Patents for class 438 subclass 129]  129           Subclass 129 indent level is 1 With electrical circuit layout
[List of Patents for class 438 subclass 130]  130           Subclass 130 indent level is 1 Rendering selected devices operable or inoperable
[List of Patents for class 438 subclass 131]  131           Subclass 131 indent level is 1 Using structure alterable to conductive state (i.e., antifuse)
[List of Patents for class 438 subclass 132]  132           Subclass 132 indent level is 1 Using structure alterable to nonconductive state (i.e., fuse)
[List of Patents for class 438 subclass 133]  133           MAKING REGENERATIVE-TYPE SWITCHING DEVICE (E.G., SCR, IGBT, THYRISTOR, ETC.)
[List of Patents for class 438 subclass 134]  134           Subclass 134 indent level is 1 Bidirectional rectifier with control electrode (e.g., triac, diac, etc.)
[List of Patents for class 438 subclass 135]  135           Subclass 135 indent level is 1 Having field effect structure
[List of Patents for class 438 subclass 136]  136           Subclass 136 indent level is 2 Junction gate
[List of Patents for class 438 subclass 137]  137           Subclass 137 indent level is 3 Vertical channel
[List of Patents for class 438 subclass 138]  138           Subclass 138 indent level is 2 Vertical channel
[List of Patents for class 438 subclass 139]  139           Subclass 139 indent level is 1 Altering electrical characteristic
[List of Patents for class 438 subclass 140]  140           Subclass 140 indent level is 1 Having structure increasing breakdown voltage (e.g., guard ring, field plate, etc.)
[List of Patents for class 438 subclass 141]  141           MAKING CONDUCTIVITY MODULATION DEVICE (E.G., UNIJUNCTION TRANSISTOR, DOUBLE BASE DIODE, CONDUCTIVITY-MODULATED TRANSISTOR, ETC.)
[List of Patents for class 438 subclass 142]  142           MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS
[List of Patents for class 438 subclass 143]  143           Subclass 143 indent level is 1 Gettering of semiconductor substrate
[List of Patents for class 438 subclass 144]  144           Subclass 144 indent level is 1 Charge transfer device (e.g., CCD, etc.)
[List of Patents for class 438 subclass 145]  145           Subclass 145 indent level is 2 Having additional electrical device
[List of Patents for class 438 subclass 146]  146           Subclass 146 indent level is 2 Majority signal carrier (e.g., buried or bulk channel, peristaltic, etc.)
[List of Patents for class 438 subclass 147]  147           Subclass 147 indent level is 2 Changing width or direction of channel (e.g., meandering channel, etc.)
[List of Patents for class 438 subclass 148]  148           Subclass 148 indent level is 2 Substantially incomplete signal charge transfer (e.g., bucket brigade, etc.)
[List of Patents for class 438 subclass 149]  149           Subclass 149 indent level is 1 On insulating substrate or layer (e.g., TFT, etc.)
[List of Patents for class 438 subclass 150]  150           Subclass 150 indent level is 2 Specified crystallographic orientation
[List of Patents for class 438 subclass 151]  151           Subclass 151 indent level is 2 Having insulated gate
[List of Patents for class 438 subclass 152]  152           Subclass 152 indent level is 3 Combined with electrical device not on insulating substrate or layer
[List of Patents for class 438 subclass 153]  153           Subclass 153 indent level is 4 Complementary field effect transistors
[List of Patents for class 438 subclass 154]  154           Subclass 154 indent level is 3 Complementary field effect transistors
[List of Patents for class 438 subclass 155]  155           Subclass 155 indent level is 3 And additional electrical device on insulating substrate or layer
[List of Patents for class 438 subclass 156]  156           Subclass 156 indent level is 3 Vertical channel
[List of Patents for class 438 subclass 157]  157           Subclass 157 indent level is 3 Plural gate electrodes (e.g., dual gate, etc.)
[List of Patents for class 438 subclass 158]  158           Subclass 158 indent level is 3 Inverted transistor structure
[List of Patents for class 438 subclass 159]  159           Subclass 159 indent level is 4 Source-to-gate or drain-to-gate overlap
[List of Patents for class 438 subclass 160]  160           Subclass 160 indent level is 4 Utilizing backside irradiation
[List of Patents for class 438 subclass 161]  161           Subclass 161 indent level is 3 Including source or drain electrode formation prior to semiconductor layer formation (i.e., staggered electrodes)
[List of Patents for class 438 subclass 162]  162           Subclass 162 indent level is 3 Introduction of nondopant into semiconductor layer
[List of Patents for class 438 subclass 163]  163           Subclass 163 indent level is 3 Adjusting channel dimension (e.g., providing lightly doped source or drain region, etc.)
[List of Patents for class 438 subclass 164]  164           Subclass 164 indent level is 3 Semiconductor islands formed upon insulating substrate or layer (e.g., mesa formation, etc.)
[List of Patents for class 438 subclass 165]  165           Subclass 165 indent level is 4 Including differential oxidation
[List of Patents for class 438 subclass 166]  166           Subclass 166 indent level is 3 Including recrystallization step
[List of Patents for class 438 subclass 167]  167           Subclass 167 indent level is 1 Having Schottky gate (e.g., MESFET, HEMT, etc.)
[List of Patents for class 438 subclass 168]  168           Subclass 168 indent level is 2 Specified crystallographic orientation
[List of Patents for class 438 subclass 169]  169           Subclass 169 indent level is 2 Complementary Schottky gate field effect transistors
[List of Patents for class 438 subclass 170]  170           Subclass 170 indent level is 2 And bipolar device
[List of Patents for class 438 subclass 171]  171           Subclass 171 indent level is 2 And passive electrical device (e.g., resistor, capacitor, etc.)
[List of Patents for class 438 subclass 172]  172           Subclass 172 indent level is 2 Having heterojunction (e.g., HEMT, MODFET, etc.)
[List of Patents for class 438 subclass 173]  173           Subclass 173 indent level is 2 Vertical channel
[List of Patents for class 438 subclass 174]  174           Subclass 174 indent level is 2 Doping of semiconductive channel region beneath gate (e.g., threshold voltage adjustment, etc.)
[List of Patents for class 438 subclass 175]  175           Subclass 175 indent level is 2 Buried channel
[List of Patents for class 438 subclass 176]  176           Subclass 176 indent level is 2 Plural gate electrodes (e.g., dual gate, etc.)
[List of Patents for class 438 subclass 177]  177           Subclass 177 indent level is 2 Closed or loop gate
[List of Patents for class 438 subclass 178]  178           Subclass 178 indent level is 2 Elemental semiconductor
[List of Patents for class 438 subclass 179]  179           Subclass 179 indent level is 2 Asymmetric
[List of Patents for class 438 subclass 180]  180           Subclass 180 indent level is 2 Self-aligned
[List of Patents for class 438 subclass 181]  181           Subclass 181 indent level is 3 Doping of semiconductive region
[List of Patents for class 438 subclass 182]  182           Subclass 182 indent level is 4 T-gate
[List of Patents for class 438 subclass 183]  183           Subclass 183 indent level is 4 Dummy gate
[List of Patents for class 438 subclass 184]  184           Subclass 184 indent level is 4 Utilizing gate sidewall structure
[List of Patents for class 438 subclass 185]  185           Subclass 185 indent level is 5 Multiple doping steps
[List of Patents for class 438 subclass 186]  186           Subclass 186 indent level is 1 Having junction gate (e.g., JFET, SIT, etc.)
[List of Patents for class 438 subclass 187]  187           Subclass 187 indent level is 2 Specified crystallographic orientation
[List of Patents for class 438 subclass 188]  188           Subclass 188 indent level is 2 Complementary junction gate field effect transistors
[List of Patents for class 438 subclass 189]  189           Subclass 189 indent level is 2 And bipolar transistor
[List of Patents for class 438 subclass 190]  190           Subclass 190 indent level is 2 And passive device (e.g., resistor, capacitor, etc.)
[List of Patents for class 438 subclass 191]  191           Subclass 191 indent level is 2 Having heterojunction
[List of Patents for class 438 subclass 192]  192           Subclass 192 indent level is 2 Vertical channel
[List of Patents for class 438 subclass 193]  193           Subclass 193 indent level is 3 Multiple parallel current paths (e.g., grid gate, etc.)
[List of Patents for class 438 subclass 194]  194           Subclass 194 indent level is 2 Doping of semiconductive channel region beneath gate (e.g., threshold voltage adjustment, etc.)
[List of Patents for class 438 subclass 195]  195           Subclass 195 indent level is 2 Plural gate electrodes
[List of Patents for class 438 subclass 196]  196           Subclass 196 indent level is 2 Including isolation structure
[List of Patents for class 438 subclass 197]  197           Subclass 197 indent level is 1 Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.)
[List of Patents for class 438 subclass 198]  198           Subclass 198 indent level is 2 Specified crystallographic orientation
[List of Patents for class 438 subclass 199]  199           Subclass 199 indent level is 2 Complementary insulated gate field effect transistors (i.e., CMOS)
[List of Patents for class 438 subclass 200]  200           Subclass 200 indent level is 3 And additional electrical device
[List of Patents for class 438 subclass 201]  201           Subclass 201 indent level is 4 Including insulated gate field effect transistor having gate surrounded by dielectric (i.e., floating gate)
[List of Patents for class 438 subclass 202]  202           Subclass 202 indent level is 4 Including bipolar transistor (i.e., BiCMOS)
[List of Patents for class 438 subclass 203]  203           Subclass 203 indent level is 5 Complementary bipolar transistors
[List of Patents for class 438 subclass 204]  204           Subclass 204 indent level is 5 Lateral bipolar transistor
[List of Patents for class 438 subclass 205]  205           Subclass 205 indent level is 5 Plural bipolar transistors of differing electrical characteristics
[List of Patents for class 438 subclass 206]  206           Subclass 206 indent level is 5 Vertical channel insulated gate field effect transistor
[List of Patents for class 438 subclass 207]  207           Subclass 207 indent level is 5 Including isolation structure
[List of Patents for class 438 subclass 208]  208           Subclass 208 indent level is 6 Isolation by PN junction only
[List of Patents for class 438 subclass 209]  209           Subclass 209 indent level is 4 Including additional vertical channel insulated gate field effect transistor
[List of Patents for class 438 subclass 210]  210           Subclass 210 indent level is 4 Including passive device (e.g., resistor, capacitor, etc.)
[List of Patents for class 438 subclass 211]  211           Subclass 211 indent level is 3 Having gate surrounded by dielectric (i.e., floating gate)
[List of Patents for class 438 subclass 212]  212           Subclass 212 indent level is 3 Vertical channel
[List of Patents for class 438 subclass 213]  213           Subclass 213 indent level is 3 Common active region
[List of Patents for class 438 subclass 214]  214           Subclass 214 indent level is 3 Having underpass or crossunder
[List of Patents for class 438 subclass 215]  215           Subclass 215 indent level is 3 Having fuse or integral short
[List of Patents for class 438 subclass 216]  216           Subclass 216 indent level is 3 Gate insulator structure constructed of diverse dielectrics (e.g., MNOS, etc.) or of nonsilicon compound
[List of Patents for class 438 subclass 217]  217           Subclass 217 indent level is 3 Doping of semiconductor channel region beneath gate insulator (e.g., threshold voltage adjustment, etc.)
[List of Patents for class 438 subclass 218]  218           Subclass 218 indent level is 3 Including isolation structure
[List of Patents for class 438 subclass 219]  219           Subclass 219 indent level is 4 Total dielectric isolation
[List of Patents for class 438 subclass 220]  220           Subclass 220 indent level is 4 Isolation by PN junction only
[List of Patents for class 438 subclass 221]  221           Subclass 221 indent level is 4 Dielectric isolation formed by grooving and refilling with dielectric material
[List of Patents for class 438 subclass 222]  222           Subclass 222 indent level is 5 With epitaxial semiconductor layer formation
[List of Patents for class 438 subclass 223]  223           Subclass 223 indent level is 5 Having well structure of opposite conductivity type
[List of Patents for class 438 subclass 224]  224           Subclass 224 indent level is 6 Plural wells
[List of Patents for class 438 subclass 225]  225           Subclass 225 indent level is 4 Recessed oxide formed by localized oxidation (i.e., LOCOS)
[List of Patents for class 438 subclass 226]  226           Subclass 226 indent level is 5 With epitaxial semiconductor layer formation
[List of Patents for class 438 subclass 227]  227           Subclass 227 indent level is 5 Having well structure of opposite conductivity type
[List of Patents for class 438 subclass 228]  228           Subclass 228 indent level is 6 Plural wells
[List of Patents for class 438 subclass 229]  229           Subclass 229 indent level is 3 Self-aligned
[List of Patents for class 438 subclass 230]  230           Subclass 230 indent level is 4 Utilizing gate sidewall structure
[List of Patents for class 438 subclass 231]  231           Subclass 231 indent level is 5 Plural doping steps
[List of Patents for class 438 subclass 232]  232           Subclass 232 indent level is 4 Plural doping steps
[List of Patents for class 438 subclass 233]  233           Subclass 233 indent level is 3 And contact formation
[List of Patents for class 438 subclass 234]  234           Subclass 234 indent level is 2 Including bipolar transistor (i.e., BiMOS)
[List of Patents for class 438 subclass 235]  235           Subclass 235 indent level is 3 Heterojunction bipolar transistor
[List of Patents for class 438 subclass 236]  236           Subclass 236 indent level is 3 Lateral bipolar transistor
[List of Patents for class 438 subclass 237]  237           Subclass 237 indent level is 2 Including diode
[List of Patents for class 438 subclass 238]  238           Subclass 238 indent level is 2 Including passive device (e.g., resistor, capacitor, etc.)
[List of Patents for class 438 subclass 239]  239           Subclass 239 indent level is 3 Capacitor
[List of Patents for class 438 subclass 240]  240           Subclass 240 indent level is 4 Having high dielectric constant insulator (e.g., Ta2O5, etc.)
[List of Patents for class 438 subclass 241]  241           Subclass 241 indent level is 4 And additional field effect transistor (e.g., sense or access transistor, etc.)
[List of Patents for class 438 subclass 242]  242           Subclass 242 indent level is 5 Including transistor formed on trench sidewalls
[List of Patents for class 438 subclass 243]  243           Subclass 243 indent level is 4 Trench capacitor
[List of Patents for class 438 subclass 244]  244           Subclass 244 indent level is 5 Utilizing stacked capacitor structure (e.g., stacked trench, buried stacked capacitor, etc.)
[List of Patents for class 438 subclass 245]  245           Subclass 245 indent level is 5 With epitaxial layer formed over the trench
[List of Patents for class 438 subclass 246]  246           Subclass 246 indent level is 5 Including doping of trench surfaces
[List of Patents for class 438 subclass 247]  247           Subclass 247 indent level is 6 Multiple doping steps
[List of Patents for class 438 subclass 248]  248           Subclass 248 indent level is 6 Including isolation means formed in trench
[List of Patents for class 438 subclass 249]  249           Subclass 249 indent level is 6 Doping by outdiffusion from a dopant source layer (e.g., doped oxide, etc.)
[List of Patents for class 438 subclass 250]  250           Subclass 250 indent level is 4 Planar capacitor
[List of Patents for class 438 subclass 251]  251           Subclass 251 indent level is 5 Including doping of semiconductive region
[List of Patents for class 438 subclass 252]  252           Subclass 252 indent level is 6 Multiple doping steps
[List of Patents for class 438 subclass 253]  253           Subclass 253 indent level is 4 Stacked capacitor
[List of Patents for class 438 subclass 254]  254           Subclass 254 indent level is 5 Including selectively removing material to undercut and expose storage node layer
[List of Patents for class 438 subclass 255]  255           Subclass 255 indent level is 5 Including texturizing storage node layer
[List of Patents for class 438 subclass 256]  256           Subclass 256 indent level is 5 Contacts formed by selective growth or deposition
[List of Patents for class 438 subclass 257]  257           Subclass 257 indent level is 2 Having additional gate electrode surrounded by dielectric (i.e., floating gate)
[List of Patents for class 438 subclass 258]  258           Subclass 258 indent level is 3 Including additional field effect transistor (e.g., sense or access transistor, etc.)
[List of Patents for class 438 subclass 259]  259           Subclass 259 indent level is 3 Including forming gate electrode in trench or recess in substrate
[List of Patents for class 438 subclass 260]  260           Subclass 260 indent level is 3 Textured surface of gate insulator or gate electrode
[List of Patents for class 438 subclass 261]  261           Subclass 261 indent level is 3 Multiple interelectrode dielectrics or nonsilicon compound gate insulator
[List of Patents for class 438 subclass 262]  262           Subclass 262 indent level is 3 Including elongated source or drain region disposed under thick oxide regions (e.g., buried or diffused bitline, etc.)
[List of Patents for class 438 subclass 263]  263           Subclass 263 indent level is 4 Tunneling insulator
[List of Patents for class 438 subclass 264]  264           Subclass 264 indent level is 3 Tunneling insulator
[List of Patents for class 438 subclass 265]  265           Subclass 265 indent level is 3 Oxidizing sidewall of gate electrode
[List of Patents for class 438 subclass 266]  266           Subclass 266 indent level is 3 Having additional, nonmemory control electrode or channel portion (e.g., for accessing field effect transistor structure, etc.)
[List of Patents for class 438 subclass 267]  267           Subclass 267 indent level is 4 Including forming gate electrode as conductive sidewall spacer to another electrode
[List of Patents for class 438 subclass 268]  268           Subclass 268 indent level is 2 Vertical channel
[List of Patents for class 438 subclass 269]  269           Subclass 269 indent level is 3 Utilizing epitaxial semiconductor layer grown through an opening in an insulating layer
[List of Patents for class 438 subclass 270]  270           Subclass 270 indent level is 3 Gate electrode in trench or recess in semiconductor substrate
[List of Patents for class 438 subclass 271]  271           Subclass 271 indent level is 4 V-gate
[List of Patents for class 438 subclass 272]  272           Subclass 272 indent level is 4 Totally embedded in semiconductive layers
[List of Patents for class 438 subclass 273]  273           Subclass 273 indent level is 3 Having integral short of source and base regions
[List of Patents for class 438 subclass 274]  274           Subclass 274 indent level is 4 Short formed in recess in substrate
[List of Patents for class 438 subclass 275]  275           Subclass 275 indent level is 2 Making plural insulated gate field effect transistors of differing electrical characteristics
[List of Patents for class 438 subclass 276]  276           Subclass 276 indent level is 3 Introducing a dopant into the channel region of selected transistors
[List of Patents for class 438 subclass 277]  277           Subclass 277 indent level is 4 Including forming overlapping gate electrodes
[List of Patents for class 438 subclass 278]  278           Subclass 278 indent level is 4 After formation of source or drain regions and gate electrode (e.g., late programming, encoding, etc.)
[List of Patents for class 438 subclass 279]  279           Subclass 279 indent level is 2 Making plural insulated gate field effect transistors having common active region
[List of Patents for class 438 subclass 280]  280           Subclass 280 indent level is 2 Having underpass or crossunder
[List of Patents for class 438 subclass 281]  281           Subclass 281 indent level is 2 Having fuse or integral short
[List of Patents for class 438 subclass 282]  282           Subclass 282 indent level is 2 Buried channel
[List of Patents for class 438 subclass 283]  283           Subclass 283 indent level is 2 Plural gate electrodes (e.g., dual gate, etc.)
[List of Patents for class 438 subclass 284]  284           Subclass 284 indent level is 2 Closed or loop gate
[List of Patents for class 438 subclass 285]  285           Subclass 285 indent level is 2 Utilizing compound semiconductor
[List of Patents for class 438 subclass 286]  286           Subclass 286 indent level is 2 Asymmetric
[List of Patents for class 438 subclass 287]  287           Subclass 287 indent level is 2 Gate insulator structure constructed of diverse dielectrics (e.g., MNOS, etc.) or of nonsilicon compound
[List of Patents for class 438 subclass 288]  288           Subclass 288 indent level is 2 Having step of storing electrical charge in gate dielectric
[List of Patents for class 438 subclass 289]  289           Subclass 289 indent level is 2 Doping of semiconductive channel region beneath gate insulator (e.g., adjusting threshold voltage, etc.)
[List of Patents for class 438 subclass 290]  290           Subclass 290 indent level is 3 After formation of source or drain regions and gate electrode
[List of Patents for class 438 subclass 291]  291           Subclass 291 indent level is 3 Using channel conductivity dopant of opposite type as that of source and drain
[List of Patents for class 438 subclass 292]  292           Subclass 292 indent level is 2 Direct application of electrical current
[List of Patents for class 438 subclass 293]  293           Subclass 293 indent level is 2 Fusion or solidification of semiconductor region
[List of Patents for class 438 subclass 294]  294           Subclass 294 indent level is 2 Including isolation structure
[List of Patents for class 438 subclass 295]  295           Subclass 295 indent level is 3 Total dielectric isolation
[List of Patents for class 438 subclass 296]  296           Subclass 296 indent level is 3 Dielectric isolation formed by grooving and refilling with dielectric material
[List of Patents for class 438 subclass 297]  297           Subclass 297 indent level is 3 Recessed oxide formed by localized oxidation (i.e., LOCOS)
[List of Patents for class 438 subclass 298]  298           Subclass 298 indent level is 4 Doping region beneath recessed oxide (e.g., to form chanstop, etc.)
[List of Patents for class 438 subclass 299]  299           Subclass 299 indent level is 2 Self-aligned
[List of Patents for class 438 subclass 300]  300           Subclass 300 indent level is 3 Having elevated source or drain (e.g., epitaxially formed source or drain, etc.)
[List of Patents for class 438 subclass 301]  301           Subclass 301 indent level is 3 Source or drain doping
[List of Patents for class 438 subclass 302]  302           Subclass 302 indent level is 4 Oblique implantation
[List of Patents for class 438 subclass 303]  303           Subclass 303 indent level is 4 Utilizing gate sidewall structure
[List of Patents for class 438 subclass 304]  304           Subclass 304 indent level is 5 Conductive sidewall component
[List of Patents for class 438 subclass 305]  305           Subclass 305 indent level is 5 Plural doping steps
[List of Patents for class 438 subclass 306]  306           Subclass 306 indent level is 4 Plural doping steps
[List of Patents for class 438 subclass 307]  307           Subclass 307 indent level is 5 Using same conductivity-type dopant
[List of Patents for class 438 subclass 308]  308           Subclass 308 indent level is 2 Radiation or energy treatment modifying properties of semiconductor regions of substrate (e.g., thermal, corpuscular, electromagnetic, etc.)
[List of Patents for class 438 subclass 309]  309           FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS
[List of Patents for class 438 subclass 310]  310           Subclass 310 indent level is 1 Gettering of semiconductor substrate
[List of Patents for class 438 subclass 311]  311           Subclass 311 indent level is 1 On insulating substrate or layer (i.e., SOI type)
[List of Patents for class 438 subclass 312]  312           Subclass 312 indent level is 1 Having heterojunction
[List of Patents for class 438 subclass 313]  313           Subclass 313 indent level is 2 Complementary bipolar transistors
[List of Patents for class 438 subclass 314]  314           Subclass 314 indent level is 2 And additional electrical device
[List of Patents for class 438 subclass 315]  315           Subclass 315 indent level is 2 Forming inverted transistor structure
[List of Patents for class 438 subclass 316]  316           Subclass 316 indent level is 2 Forming lateral transistor structure
[List of Patents for class 438 subclass 317]  317           Subclass 317 indent level is 2 Wide bandgap emitter
[List of Patents for class 438 subclass 318]  318           Subclass 318 indent level is 2 Including isolation structure
[List of Patents for class 438 subclass 319]  319           Subclass 319 indent level is 3 Air isolation (e.g., mesa, etc.)
[List of Patents for class 438 subclass 320]  320           Subclass 320 indent level is 2 Self-aligned
[List of Patents for class 438 subclass 321]  321           Subclass 321 indent level is 3 Utilizing dummy emitter
[List of Patents for class 438 subclass 322]  322           Subclass 322 indent level is 1 Complementary bipolar transistors
[List of Patents for class 438 subclass 323]  323           Subclass 323 indent level is 2 Having common active region (i.e., integrated injection logic (I2L), etc.)
[List of Patents for class 438 subclass 324]  324           Subclass 324 indent level is 3 Including additional electrical device
[List of Patents for class 438 subclass 325]  325           Subclass 325 indent level is 3 Having lateral bipolar transistor
[List of Patents for class 438 subclass 326]  326           Subclass 326 indent level is 2 Including additional electrical device
[List of Patents for class 438 subclass 327]  327           Subclass 327 indent level is 2 Having lateral bipolar transistor
[List of Patents for class 438 subclass 328]  328           Subclass 328 indent level is 1 Including diode
[List of Patents for class 438 subclass 329]  329           Subclass 329 indent level is 1 Including passive device (e.g., resistor, capacitor, etc.)
[List of Patents for class 438 subclass 330]  330           Subclass 330 indent level is 2 Resistor
[List of Patents for class 438 subclass 331]  331           Subclass 331 indent level is 3 Having same doping as emitter or collector
[List of Patents for class 438 subclass 332]  332           Subclass 332 indent level is 3 Lightly doped junction isolated resistor
[List of Patents for class 438 subclass 333]  333           Subclass 333 indent level is 1 Having fuse or integral short
[List of Patents for class 438 subclass 334]  334           Subclass 334 indent level is 1 Forming inverted transistor structure
[List of Patents for class 438 subclass 335]  335           Subclass 335 indent level is 1 Forming lateral transistor structure
[List of Patents for class 438 subclass 336]  336           Subclass 336 indent level is 2 Combined with vertical bipolar transistor
[List of Patents for class 438 subclass 337]  337           Subclass 337 indent level is 2 Active region formed along groove or exposed edge in semiconductor
[List of Patents for class 438 subclass 338]  338           Subclass 338 indent level is 2 Having multiple emitter or collector structure
[List of Patents for class 438 subclass 339]  339           Subclass 339 indent level is 2 Self-aligned
[List of Patents for class 438 subclass 340]  340           Subclass 340 indent level is 1 Making plural bipolar transistors of differing electrical characteristics
[List of Patents for class 438 subclass 341]  341           Subclass 341 indent level is 1 Using epitaxial lateral overgrowth
[List of Patents for class 438 subclass 342]  342           Subclass 342 indent level is 1 Having multiple emitter or collector structure
[List of Patents for class 438 subclass 343]  343           Subclass 343 indent level is 1 Mesa or stacked emitter
[List of Patents for class 438 subclass 344]  344           Subclass 344 indent level is 1 Washed emitter
[List of Patents for class 438 subclass 345]  345           Subclass 345 indent level is 1 Walled emitter
[List of Patents for class 438 subclass 346]  346           Subclass 346 indent level is 1 Emitter dip prevention or utilization
[List of Patents for class 438 subclass 347]  347           Subclass 347 indent level is 1 Permeable or metal base
[List of Patents for class 438 subclass 348]  348           Subclass 348 indent level is 1 Sidewall base contact
[List of Patents for class 438 subclass 349]  349           Subclass 349 indent level is 1 Pedestal base
[List of Patents for class 438 subclass 350]  350           Subclass 350 indent level is 1 Forming base region of specified dopant concentration profile (e.g., inactive base region more heavily doped than active base region, etc.)
[List of Patents for class 438 subclass 351]  351           Subclass 351 indent level is 1 Direct application of electrical current
[List of Patents for class 438 subclass 352]  352           Subclass 352 indent level is 1 Fusion or solidification of semiconductor region
[List of Patents for class 438 subclass 353]  353           Subclass 353 indent level is 1 Including isolation structure
[List of Patents for class 438 subclass 354]  354           Subclass 354 indent level is 2 Having semi-insulative region
[List of Patents for class 438 subclass 355]  355           Subclass 355 indent level is 2 Total dielectrical isolation
[List of Patents for class 438 subclass 356]  356           Subclass 356 indent level is 2 Isolation by PN junction only
[List of Patents for class 438 subclass 357]  357           Subclass 357 indent level is 3 Including epitaxial semiconductor layer formation
[List of Patents for class 438 subclass 358]  358           Subclass 358 indent level is 4 Up diffusion of dopant from substrate into epitaxial layer
[List of Patents for class 438 subclass 359]  359           Subclass 359 indent level is 2 Dielectric isolation formed by grooving and refilling with dielectrical material
[List of Patents for class 438 subclass 360]  360           Subclass 360 indent level is 3 With epitaxial semiconductor formation in groove
[List of Patents for class 438 subclass 361]  361           Subclass 361 indent level is 3 Including deposition of polysilicon or noninsulative material into groove
[List of Patents for class 438 subclass 362]  362           Subclass 362 indent level is 2 Recessed oxide by localized oxidation (i.e., LOCOS)
[List of Patents for class 438 subclass 363]  363           Subclass 363 indent level is 3 With epitaxial semiconductor layer formation
[List of Patents for class 438 subclass 364]  364           Subclass 364 indent level is 1 Self-aligned
[List of Patents for class 438 subclass 365]  365           Subclass 365 indent level is 2 Forming active region from adjacent doped polycrystalline or amorphous semiconductor
[List of Patents for class 438 subclass 366]  366           Subclass 366 indent level is 3 Having sidewall
[List of Patents for class 438 subclass 367]  367           Subclass 367 indent level is 4 Including conductive component
[List of Patents for class 438 subclass 368]  368           Subclass 368 indent level is 3 Simultaneously outdiffusing plural dopants from polysilicon or amorphous semiconductor
[List of Patents for class 438 subclass 369]  369           Subclass 369 indent level is 2 Dopant implantation or diffusion
[List of Patents for class 438 subclass 370]  370           Subclass 370 indent level is 3 Forming buried region (e.g., implanting through insulating layer, etc.)
[List of Patents for class 438 subclass 371]  371           Subclass 371 indent level is 3 Simultaneous introduction of plural dopants
[List of Patents for class 438 subclass 372]  372           Subclass 372 indent level is 4 Plural doping steps
[List of Patents for class 438 subclass 373]  373           Subclass 373 indent level is 5 Multiple ion implantation steps
[List of Patents for class 438 subclass 374]  374           Subclass 374 indent level is 6 Using same conductivity-type dopant
[List of Patents for class 438 subclass 375]  375           Subclass 375 indent level is 5 Forming partially overlapping regions
[List of Patents for class 438 subclass 376]  376           Subclass 376 indent level is 5 Single dopant forming regions of different depth or concentrations
[List of Patents for class 438 subclass 377]  377           Subclass 377 indent level is 5 Through same mask opening
[List of Patents for class 438 subclass 378]  378           Subclass 378 indent level is 1 Radiation or energy treatment modifying properties of semiconductor regions of substrate (e.g., thermal, corpuscular, electromagnetic, etc.)
[List of Patents for class 438 subclass 379]  379           VOLTAGE VARIABLE CAPACITANCE DEVICE MANUFACTURE (E.G., VARACTOR, ETC.)
[List of Patents for class 438 subclass 380]  380           AVALANCHE DIODE MANUFACTURE (E.G., IMPATT, TRAPPAT, ETC.)
[List of Patents for class 438 subclass 381]  381           MAKING PASSIVE DEVICE (E.G., RESISTOR, CAPACITOR, ETC.)
[List of Patents for class 438 subclass 382]  382           Subclass 382 indent level is 1 Resistor
[List of Patents for class 438 subclass 383]  383           Subclass 383 indent level is 2 Lightly doped junction isolated resistor
[List of Patents for class 438 subclass 384]  384           Subclass 384 indent level is 2 Deposited thin film resistor
[List of Patents for class 438 subclass 385]  385           Subclass 385 indent level is 3 Altering resistivity of conductor
[List of Patents for class 438 subclass 386]  386           Subclass 386 indent level is 1 Trench capacitor
[List of Patents for class 438 subclass 387]  387           Subclass 387 indent level is 2 Having stacked capacitor structure (e.g., stacked trench, buried stacked capacitor, etc.)
[List of Patents for class 438 subclass 388]  388           Subclass 388 indent level is 2 With epitaxial layer formed over the trench
[List of Patents for class 438 subclass 389]  389           Subclass 389 indent level is 2 Including doping of trench surfaces
[List of Patents for class 438 subclass 390]  390           Subclass 390 indent level is 3 Multiple doping steps
[List of Patents for class 438 subclass 391]  391           Subclass 391 indent level is 3 Including isolation means formed in trench
[List of Patents for class 438 subclass 392]  392           Subclass 392 indent level is 3 Doping by outdiffusion from a dopant source layer (e.g., doped oxide)
[List of Patents for class 438 subclass 393]  393           Subclass 393 indent level is 1 Planar capacitor
[List of Patents for class 438 subclass 394]  394           Subclass 394 indent level is 2 Including doping of semiconductive region
[List of Patents for class 438 subclass 395]  395           Subclass 395 indent level is 3 Multiple doping steps
[List of Patents for class 438 subclass 396]  396           Subclass 396 indent level is 1 Stacked capacitor
[List of Patents for class 438 subclass 397]  397           Subclass 397 indent level is 2 Including selectively removing material to undercut and expose storage node layer
[List of Patents for class 438 subclass 398]  398           Subclass 398 indent level is 2 Including texturizing storage node layer
[List of Patents for class 438 subclass 399]  399           Subclass 399 indent level is 2 Having contacts formed by selective growth or deposition
[List of Patents for class 438 subclass 400]  400           FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE
[List of Patents for class 438 subclass 401]  401           Subclass 401 indent level is 1 Having substrate registration feature (e.g., alignment mark)
[List of Patents for class 438 subclass 402]  402           Subclass 402 indent level is 1 And gettering of substrate
[List of Patents for class 438 subclass 403]  403           Subclass 403 indent level is 1 Having semi-insulating component
[List of Patents for class 438 subclass 404]  404           Subclass 404 indent level is 1 Total dielectric isolation
[List of Patents for class 438 subclass 405]  405           Subclass 405 indent level is 2 And separate partially isolated semiconductor regions
[List of Patents for class 438 subclass 406]  406           Subclass 406 indent level is 2 Bonding of plural semiconductive substrates
[List of Patents for class 438 subclass 407]  407           Subclass 407 indent level is 2 Nondopant implantation
[List of Patents for class 438 subclass 408]  408           Subclass 408 indent level is 2 With electrolytic treatment step
[List of Patents for class 438 subclass 409]  409           Subclass 409 indent level is 3 Porous semiconductor formation
[List of Patents for class 438 subclass 410]  410           Subclass 410 indent level is 2 Encroachment of separate locally oxidized regions
[List of Patents for class 438 subclass 411]  411           Subclass 411 indent level is 2 Air isolation (e.g., beam lead supported semiconductor islands, etc.)
[List of Patents for class 438 subclass 412]  412           Subclass 412 indent level is 3 Semiconductor islands formed upon insulating substrate or layer (e.g., mesa isolation, etc.)
[List of Patents for class 438 subclass 413]  413           Subclass 413 indent level is 2 With epitaxial semiconductor formation
[List of Patents for class 438 subclass 414]  414           Subclass 414 indent level is 1 Isolation by PN junction only
[List of Patents for class 438 subclass 415]  415           Subclass 415 indent level is 2 Thermomigration
[List of Patents for class 438 subclass 416]  416           Subclass 416 indent level is 2 With epitaxial semiconductor formation
[List of Patents for class 438 subclass 417]  417           Subclass 417 indent level is 3 And simultaneous polycrystalline growth
[List of Patents for class 438 subclass 418]  418           Subclass 418 indent level is 3 Dopant addition
[List of Patents for class 438 subclass 419]  419           Subclass 419 indent level is 4 Plural doping steps
[List of Patents for class 438 subclass 420]  420           Subclass 420 indent level is 2 Plural doping steps
[List of Patents for class 438 subclass 421]  421           Subclass 421 indent level is 1 Having air-gap dielectric (e.g., groove, etc.)
[List of Patents for class 438 subclass 422]  422           Subclass 422 indent level is 2 Enclosed cavity
[List of Patents for class 438 subclass 423]  423           Subclass 423 indent level is 1 Implanting to form insulator
[List of Patents for class 438 subclass 424]  424           Subclass 424 indent level is 1 Grooved and refilled with deposited dielectric material
[List of Patents for class 438 subclass 425]  425           Subclass 425 indent level is 2 Combined with formation of recessed oxide by localized oxidation
[List of Patents for class 438 subclass 426]  426           Subclass 426 indent level is 3 Recessed oxide laterally extending from groove
[List of Patents for class 438 subclass 427]  427           Subclass 427 indent level is 2 Refilling multiple grooves of different widths or depths
[List of Patents for class 438 subclass 428]  428           Subclass 428 indent level is 3 Reflow of insulator
[List of Patents for class 438 subclass 429]  429           Subclass 429 indent level is 2 And epitaxial semiconductor formation in groove
[List of Patents for class 438 subclass 430]  430           Subclass 430 indent level is 2 And deposition of polysilicon or noninsulative material into groove
[List of Patents for class 438 subclass 431]  431           Subclass 431 indent level is 3 Oxidation of deposited material
[List of Patents for class 438 subclass 432]  432           Subclass 432 indent level is 4 Nonoxidized portions remaining in groove after oxidation
[List of Patents for class 438 subclass 433]  433           Subclass 433 indent level is 2 Dopant addition
[List of Patents for class 438 subclass 434]  434           Subclass 434 indent level is 3 From doped insulator in groove
[List of Patents for class 438 subclass 435]  435           Subclass 435 indent level is 2 Multiple insulative layers in groove
[List of Patents for class 438 subclass 436]  436           Subclass 436 indent level is 3 Reflow of insulator
[List of Patents for class 438 subclass 437]  437           Subclass 437 indent level is 3 Conformal insulator formation
[List of Patents for class 438 subclass 438]  438           Subclass 438 indent level is 2 Reflow of insulator
[List of Patents for class 438 subclass 439]  439           Subclass 439 indent level is 1 Recessed oxide by localized oxidation (i.e., LOCOS)
[List of Patents for class 438 subclass 440]  440           Subclass 440 indent level is 2 Including nondopant implantation
[List of Patents for class 438 subclass 441]  441           Subclass 441 indent level is 2 With electrolytic treatment step
[List of Patents for class 438 subclass 442]  442           Subclass 442 indent level is 2 With epitaxial semiconductor layer formation
[List of Patents for class 438 subclass 443]  443           Subclass 443 indent level is 2 Etchback of recessed oxide
[List of Patents for class 438 subclass 444]  444           Subclass 444 indent level is 2 Preliminary etching of groove
[List of Patents for class 438 subclass 445]  445           Subclass 445 indent level is 3 Masking of groove sidewall
[List of Patents for class 438 subclass 446]  446           Subclass 446 indent level is 4 Polysilicon containing sidewall
[List of Patents for class 438 subclass 447]  447           Subclass 447 indent level is 4 Dopant addition
[List of Patents for class 438 subclass 448]  448           Subclass 448 indent level is 2 Utilizing oxidation mask having polysilicon component
[List of Patents for class 438 subclass 449]  449           Subclass 449 indent level is 2 Dopant addition
[List of Patents for class 438 subclass 450]  450           Subclass 450 indent level is 3 Implanting through recessed oxide
[List of Patents for class 438 subclass 451]  451           Subclass 451 indent level is 3 Plural doping steps
[List of Patents for class 438 subclass 452]  452           Subclass 452 indent level is 2 Plural oxidation steps to form recessed oxide
[List of Patents for class 438 subclass 453]  453           Subclass 453 indent level is 2 And electrical conductor formation (i.e., metallization)
[List of Patents for class 438 subclass 454]  454           Subclass 454 indent level is 1 Field plate electrode
[List of Patents for class 438 subclass 455]  455           BONDING OF PLURAL SEMICONDUCTOR SUBSTRATES
[List of Patents for class 438 subclass 456]  456           Subclass 456 indent level is 1 Having enclosed cavity
[List of Patents for class 438 subclass 457]  457           Subclass 457 indent level is 1 Warping of semiconductor substrate
[List of Patents for class 438 subclass 458]  458           Subclass 458 indent level is 1 Subsequent separation into plural bodies (e.g., delaminating, dicing, etc.)
[List of Patents for class 438 subclass 459]  459           Subclass 459 indent level is 1 Thinning of semiconductor substrate
[List of Patents for class 438 subclass 460]  460           SEMICONDUCTOR SUBSTRATE DICING
[List of Patents for class 438 subclass 461]  461           Subclass 461 indent level is 1 Beam lead formation
[List of Patents for class 438 subclass 462]  462           Subclass 462 indent level is 1 Having specified scribe region structure (e.g., alignment mark, plural grooves, etc.)
[List of Patents for class 438 subclass 463]  463           Subclass 463 indent level is 1 By electromagnetic irradiation (e.g., electron, laser, etc.)
[List of Patents for class 438 subclass 464]  464           Subclass 464 indent level is 1 With attachment to temporary support or carrier
[List of Patents for class 438 subclass 465]  465           Subclass 465 indent level is 1 Having a perfecting coating
[List of Patents for class 438 subclass 466]  466           DIRECT APPLICATION OF ELECTRICAL CURRENT
[List of Patents for class 438 subclass 467]  467           Subclass 467 indent level is 1 To alter conductivity of fuse or antifuse element
[List of Patents for class 438 subclass 468]  468           Subclass 468 indent level is 1 Electromigration
[List of Patents for class 438 subclass 469]  469           Subclass 469 indent level is 1 Utilizing pulsed current
[List of Patents for class 438 subclass 470]  470           Subclass 470 indent level is 1 Fusion of semiconductor region
[List of Patents for class 438 subclass 471]  471           GETTERING OF SUBSTRATE
[List of Patents for class 438 subclass 472]  472           Subclass 472 indent level is 1 By vibrating or impacting
[List of Patents for class 438 subclass 473]  473           Subclass 473 indent level is 1 By implanting or irradiating
[List of Patents for class 438 subclass 474]  474           Subclass 474 indent level is 2 Ionized radiation (e.g., corpuscular or plasma treatment, etc.)
[List of Patents for class 438 subclass 475]  475           Subclass 475 indent level is 3 Hydrogen plasma (i.e., hydrogenization)
[List of Patents for class 438 subclass 476]  476           Subclass 476 indent level is 1 By layers which are coated, contacted, or diffused
[List of Patents for class 438 subclass 477]  477           Subclass 477 indent level is 1 By vapor phase surface reaction
[List of Patents for class 438 subclass 478]  478           FORMATION OF SEMICONDUCTIVE ACTIVE REGION ON ANY SUBSTRATE (E.G., FLUID GROWTH, DEPOSITION)
[List of Patents for class 438 subclass 479]  479           Subclass 479 indent level is 1 On insulating substrate or layer
[List of Patents for class 438 subclass 480]  480           Subclass 480 indent level is 2 Including implantation of ion which reacts with semiconductor substrate to form insulating layer
[List of Patents for class 438 subclass 481]  481           Subclass 481 indent level is 2 Utilizing epitaxial lateral overgrowth
[List of Patents for class 438 subclass 482]  482           Subclass 482 indent level is 1 Amorphous semiconductor
[List of Patents for class 438 subclass 483]  483           Subclass 483 indent level is 2 Compound semiconductor
[List of Patents for class 438 subclass 484]  484           Subclass 484 indent level is 2 Running length (e.g., sheet, strip, etc.)
[List of Patents for class 438 subclass 485]  485           Subclass 485 indent level is 2 Deposition utilizing plasma (e.g., glow discharge, etc.)
[List of Patents for class 438 subclass 486]  486           Subclass 486 indent level is 2 And subsequent crystallization
[List of Patents for class 438 subclass 487]  487           Subclass 487 indent level is 3 Utilizing wave energy (e.g., laser, electron beam, etc.)
[List of Patents for class 438 subclass 488]  488           Subclass 488 indent level is 1 Polycrystalline semiconductor
[List of Patents for class 438 subclass 489]  489           Subclass 489 indent level is 2 Simultaneous single crystal formation
[List of Patents for class 438 subclass 490]  490           Subclass 490 indent level is 2 Running length (e.g., sheet, strip, etc.)
[List of Patents for class 438 subclass 491]  491           Subclass 491 indent level is 2 And subsequent doping of polycrystalline semiconductor
[List of Patents for class 438 subclass 492]  492           Subclass 492 indent level is 1 Fluid growth step with preceding and subsequent diverse operation
[List of Patents for class 438 subclass 493]  493           Subclass 493 indent level is 1 Plural fluid growth steps with intervening diverse operation
[List of Patents for class 438 subclass 494]  494           Subclass 494 indent level is 2 Differential etching
[List of Patents for class 438 subclass 495]  495           Subclass 495 indent level is 2 Doping of semiconductor
[List of Patents for class 438 subclass 496]  496           Subclass 496 indent level is 2 Coating of semiconductive substrate with nonsemiconductive material
[List of Patents for class 438 subclass 497]  497           Subclass 497 indent level is 1 Fluid growth from liquid combined with preceding diverse operation
[List of Patents for class 438 subclass 498]  498           Subclass 498 indent level is 2 Differential etching
[List of Patents for class 438 subclass 499]  499           Subclass 499 indent level is 2 Doping of semiconductor
[List of Patents for class 438 subclass 500]  500           Subclass 500 indent level is 1 Fluid growth from liquid combined with subsequent diverse operation
[List of Patents for class 438 subclass 501]  501           Subclass 501 indent level is 2 Doping of semiconductor
[List of Patents for class 438 subclass 502]  502           Subclass 502 indent level is 2 Heat treatment
[List of Patents for class 438 subclass 503]  503           Subclass 503 indent level is 1 Fluid growth from gaseous state combined with preceding diverse operation
[List of Patents for class 438 subclass 504]  504           Subclass 504 indent level is 2 Differential etching
[List of Patents for class 438 subclass 505]  505           Subclass 505 indent level is 2 Doping of semiconductor
[List of Patents for class 438 subclass 506]  506           Subclass 506 indent level is 3 Ion implantation
[List of Patents for class 438 subclass 507]  507           Subclass 507 indent level is 1 Fluid growth from gaseous state combined with subsequent diverse operation
[List of Patents for class 438 subclass 508]  508           Subclass 508 indent level is 2 Doping of semiconductor
[List of Patents for class 438 subclass 509]  509           Subclass 509 indent level is 2 Heat treatment
[List of Patents for class 438 subclass 510]  510           INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL
[List of Patents for class 438 subclass 511]  511           Subclass 511 indent level is 1 Ordering or disordering
[List of Patents for class 438 subclass 512]  512           Subclass 512 indent level is 1 Involving nuclear transmutation doping
[List of Patents for class 438 subclass 513]  513           Subclass 513 indent level is 1 Plasma (e.g., glow discharge, etc.)
[List of Patents for class 438 subclass 514]  514           Subclass 514 indent level is 1 Ion implantation of dopant into semiconductor region
[List of Patents for class 438 subclass 515]  515           Subclass 515 indent level is 2 Ionized molecules
[List of Patents for class 438 subclass 516]  516           Subclass 516 indent level is 2 Including charge neutralization
[List of Patents for class 438 subclass 517]  517           Subclass 517 indent level is 2 Of semiconductor layer on insulating substrate or layer
[List of Patents for class 438 subclass 518]  518           Subclass 518 indent level is 2 Of compound semiconductor
[List of Patents for class 438 subclass 519]  519           Subclass 519 indent level is 3 Including multiple implantation steps
[List of Patents for class 438 subclass 520]  520           Subclass 520 indent level is 4 Providing nondopant ion (e.g., proton, etc.)
[List of Patents for class 438 subclass 521]  521           Subclass 521 indent level is 4 Using same conductivity-type dopant
[List of Patents for class 438 subclass 522]  522           Subclass 522 indent level is 3 Including heat treatment
[List of Patents for class 438 subclass 523]  523           Subclass 523 indent level is 3 And contact formation (i.e., metallization)
[List of Patents for class 438 subclass 524]  524           Subclass 524 indent level is 2 Into grooved semiconductor substrate region
[List of Patents for class 438 subclass 525]  525           Subclass 525 indent level is 2 Using oblique beam
[List of Patents for class 438 subclass 526]  526           Subclass 526 indent level is 2 Forming buried region
[List of Patents for class 438 subclass 527]  527           Subclass 527 indent level is 2 Including multiple implantation steps
[List of Patents for class 438 subclass 528]  528           Subclass 528 indent level is 3 Providing nondopant ion (e.g., proton, etc.)
[List of Patents for class 438 subclass 529]  529           Subclass 529 indent level is 3 Using same conductivity-type dopant
[List of Patents for class 438 subclass 530]  530           Subclass 530 indent level is 2 Including heat treatment
[List of Patents for class 438 subclass 531]  531           Subclass 531 indent level is 2 Using shadow mask
[List of Patents for class 438 subclass 532]  532           Subclass 532 indent level is 2 Into polycrystalline region
[List of Patents for class 438 subclass 533]  533           Subclass 533 indent level is 2 And contact formation (i.e., metallization)
[List of Patents for class 438 subclass 534]  534           Subclass 534 indent level is 3 Rectifying contact (i.e., Schottky contact)
[List of Patents for class 438 subclass 535]  535           Subclass 535 indent level is 1 By application of corpuscular or electromagnetic radiation (e.g., electron, laser, etc.)
[List of Patents for class 438 subclass 536]  536           Subclass 536 indent level is 2 Recoil implantation
[List of Patents for class 438 subclass 537]  537           Subclass 537 indent level is 1 Fusing dopant with substrate (i.e., alloy junction)
[List of Patents for class 438 subclass 538]  538           Subclass 538 indent level is 2 Using additional material to improve wettability or flow characteristics (e.g., flux, etc.)
[List of Patents for class 438 subclass 539]  539           Subclass 539 indent level is 2 Application of pressure to material during fusion
[List of Patents for class 438 subclass 540]  540           Subclass 540 indent level is 2 Including plural controlled heating or cooling steps or nonuniform heating
[List of Patents for class 438 subclass 541]  541           Subclass 541 indent level is 3 Including diffusion after fusing step
[List of Patents for class 438 subclass 542]  542           Subclass 542 indent level is 1 Diffusing a dopant
[List of Patents for class 438 subclass 543]  543           Subclass 543 indent level is 2 To control carrier lifetime (i.e., deep level dopant)
[List of Patents for class 438 subclass 544]  544           Subclass 544 indent level is 2 To solid-state solubility concentration
[List of Patents for class 438 subclass 545]  545           Subclass 545 indent level is 2 Forming partially overlapping regions
[List of Patents for class 438 subclass 546]  546           Subclass 546 indent level is 2 Plural dopants in same region (e.g., through same mask opening, etc.)
[List of Patents for class 438 subclass 547]  547           Subclass 547 indent level is 3 Simultaneously
[List of Patents for class 438 subclass 548]  548           Subclass 548 indent level is 2 Plural dopants simultaneously in plural regions
[List of Patents for class 438 subclass 549]  549           Subclass 549 indent level is 2 Single dopant forming plural diverse regions (e.g., forming regions of different concentrations or of different depths, etc.)
[List of Patents for class 438 subclass 550]  550           Subclass 550 indent level is 2 Nonuniform heating
[List of Patents for class 438 subclass 551]  551           Subclass 551 indent level is 2 Using multiple layered mask
[List of Patents for class 438 subclass 552]  552           Subclass 552 indent level is 3 Having plural predetermined openings in master mask
[List of Patents for class 438 subclass 553]  553           Subclass 553 indent level is 2 Using metal mask
[List of Patents for class 438 subclass 554]  554           Subclass 554 indent level is 2 Outwardly
[List of Patents for class 438 subclass 555]  555           Subclass 555 indent level is 2 Laterally under mask opening
[List of Patents for class 438 subclass 556]  556           Subclass 556 indent level is 2 Edge diffusion by using edge portion of structure other than masking layer to mask
[List of Patents for class 438 subclass 557]  557           Subclass 557 indent level is 2 From melt
[List of Patents for class 438 subclass 558]  558           Subclass 558 indent level is 2 From solid dopant source in contact with semiconductor region
[List of Patents for class 438 subclass 559]  559           Subclass 559 indent level is 3 Using capping layer over dopant source to prevent out-diffusion of dopant
[List of Patents for class 438 subclass 560]  560           Subclass 560 indent level is 3 Plural diffusion stages
[List of Patents for class 438 subclass 561]  561           Subclass 561 indent level is 3 Dopant source within trench or groove
[List of Patents for class 438 subclass 562]  562           Subclass 562 indent level is 3 Organic source
[List of Patents for class 438 subclass 563]  563           Subclass 563 indent level is 3 Glassy source or doped oxide
[List of Patents for class 438 subclass 564]  564           Subclass 564 indent level is 3 Polycrystalline semiconductor source
[List of Patents for class 438 subclass 565]  565           Subclass 565 indent level is 2 From vapor phase
[List of Patents for class 438 subclass 566]  566           Subclass 566 indent level is 3 Plural diffusion stages
[List of Patents for class 438 subclass 567]  567           Subclass 567 indent level is 3 Solid source in operative relation with semiconductor region
[List of Patents for class 438 subclass 568]  568           Subclass 568 indent level is 4 In capsule-type enclosure
[List of Patents for class 438 subclass 569]  569           Subclass 569 indent level is 3 Into compound semiconductor region
[List of Patents for class 438 subclass 570]  570           FORMING SCHOTTKY JUNCTION (I.E., SEMICONDUCTOR-CONDUCTOR RECTIFYING JUNCTION CONTACT)
[List of Patents for class 438 subclass 571]  571           Subclass 571 indent level is 1 Combined with formation of ohmic contact to semiconductor region
[List of Patents for class 438 subclass 572]  572           Subclass 572 indent level is 1 Compound semiconductor
[List of Patents for class 438 subclass 573]  573           Subclass 573 indent level is 2 Multilayer electrode
[List of Patents for class 438 subclass 574]  574           Subclass 574 indent level is 3 T-shaped electrode
[List of Patents for class 438 subclass 575]  575           Subclass 575 indent level is 3 Using platinum group metal (i.e., platinum (Pt), palladium (Pd), rodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof)
[List of Patents for class 438 subclass 576]  576           Subclass 576 indent level is 2 Into grooved or recessed semiconductor region
[List of Patents for class 438 subclass 577]  577           Subclass 577 indent level is 3 Utilizing lift-off
[List of Patents for class 438 subclass 578]  578           Subclass 578 indent level is 3 Forming electrode of specified shape (e.g., slanted, etc.)
[List of Patents for class 438 subclass 579]  579           Subclass 579 indent level is 4 T-shaped electrode
[List of Patents for class 438 subclass 580]  580           Subclass 580 indent level is 1 Using platinum group metal (i.e., platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof)
[List of Patents for class 438 subclass 581]  581           Subclass 581 indent level is 2 Silicide
[List of Patents for class 438 subclass 582]  582           Subclass 582 indent level is 1 Using refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)
[List of Patents for class 438 subclass 583]  583           Subclass 583 indent level is 2 Silicide
[List of Patents for class 438 subclass 584]  584           COATING WITH ELECTRICALLY OR THERMALLY CONDUCTIVE MATERIAL
[List of Patents for class 438 subclass 585]  585           Subclass 585 indent level is 1 Insulated gate formation
[List of Patents for class 438 subclass 586]  586           Subclass 586 indent level is 2 Combined with formation of ohmic contact to semiconductor region
[List of Patents for class 438 subclass 587]  587           Subclass 587 indent level is 2 Forming array of gate electrodes
[List of Patents for class 438 subclass 588]  588           Subclass 588 indent level is 3 Plural gate levels
[List of Patents for class 438 subclass 589]  589           Subclass 589 indent level is 2 Recessed into semiconductor substrate
[List of Patents for class 438 subclass 590]  590           Subclass 590 indent level is 2 Compound semiconductor
[List of Patents for class 438 subclass 591]  591           Subclass 591 indent level is 2 Gate insulator structure constructed of plural layers or nonsilicon containing compound
[List of Patents for class 438 subclass 592]  592           Subclass 592 indent level is 2 Possessing plural conductive layers (e.g., polycide)
[List of Patents for class 438 subclass 593]  593           Subclass 593 indent level is 3 Separated by insulator (i.e., floating gate)
[List of Patents for class 438 subclass 594]  594           Subclass 594 indent level is 4 Tunnelling dielectric layer
[List of Patents for class 438 subclass 595]  595           Subclass 595 indent level is 2 Having sidewall structure
[List of Patents for class 438 subclass 596]  596           Subclass 596 indent level is 3 Portion of sidewall structure is conductive
[List of Patents for class 438 subclass 597]  597           Subclass 597 indent level is 1 To form ohmic contact to semiconductive material
[List of Patents for class 438 subclass 598]  598           Subclass 598 indent level is 2 Selectively interconnecting (e.g., customization, wafer scale integration, etc.)
[List of Patents for class 438 subclass 599]  599           Subclass 599 indent level is 3 With electrical circuit layout
[List of Patents for class 438 subclass 600]  600           Subclass 600 indent level is 3 Using structure alterable to conductive state (i.e., antifuse)
[List of Patents for class 438 subclass 601]  601           Subclass 601 indent level is 3 Using structure alterable to nonconductive state (i.e., fuse)
[List of Patents for class 438 subclass 602]  602           Subclass 602 indent level is 2 To compound semiconductor
[List of Patents for class 438 subclass 603]  603           Subclass 603 indent level is 3 II-VI compound semiconductor
[List of Patents for class 438 subclass 604]  604           Subclass 604 indent level is 3 III-V compound semiconductor
[List of Patents for class 438 subclass 605]  605           Subclass 605 indent level is 4 Multilayer electrode
[List of Patents for class 438 subclass 606]  606           Subclass 606 indent level is 4 Ga and As containing semiconductor
[List of Patents for class 438 subclass 607]  607           Subclass 607 indent level is 2 With epitaxial conductor formation
[List of Patents for class 438 subclass 608]  608           Subclass 608 indent level is 2 Oxidic conductor (e.g., indium tin oxide, etc.)
[List of Patents for class 438 subclass 609]  609           Subclass 609 indent level is 3 Transparent conductor
[List of Patents for class 438 subclass 610]  610           Subclass 610 indent level is 2 Conductive macromolecular conductor (including metal powder filled composition)
[List of Patents for class 438 subclass 611]  611           Subclass 611 indent level is 2 Beam lead formation
[List of Patents for class 438 subclass 612]  612           Subclass 612 indent level is 2 Forming solder contact or bonding pad
[List of Patents for class 438 subclass 613]  613           Subclass 613 indent level is 3 Bump electrode
[List of Patents for class 438 subclass 614]  614           Subclass 614 indent level is 4 Plural conductive layers
[List of Patents for class 438 subclass 615]  615           Subclass 615 indent level is 4 Including fusion of conductor
[List of Patents for class 438 subclass 616]  616           Subclass 616 indent level is 5 By transcription from auxiliary substrate
[List of Patents for class 438 subclass 617]  617           Subclass 617 indent level is 5 By wire bonding
[List of Patents for class 438 subclass 618]  618           Subclass 618 indent level is 2 Contacting multiple semiconductive regions (i.e., interconnects)
[List of Patents for class 438 subclass 619]  619           Subclass 619 indent level is 3 Air bridge structure
[List of Patents for class 438 subclass 620]  620           Subclass 620 indent level is 3 Forming contacts of differing depths into semiconductor substrate
[List of Patents for class 438 subclass 621]  621           Subclass 621 indent level is 3 Contacting diversely doped semiconductive regions (e.g., p-type and n-type regions, etc.)
[List of Patents for class 438 subclass 622]  622           Subclass 622 indent level is 3 Multiple metal levels, separated by insulating layer (i.e., multiple level metallization)
[List of Patents for class 438 subclass 623]  623           Subclass 623 indent level is 4 Including organic insulating material between metal levels
[List of Patents for class 438 subclass 624]  624           Subclass 624 indent level is 4 Separating insulating layer is laminate or composite of plural insulating materials
[List of Patents for class 438 subclass 625]  625           Subclass 625 indent level is 4 At least one metallization level formed of diverse conductive layers
[List of Patents for class 438 subclass 626]  626           Subclass 626 indent level is 5 Planarization
[List of Patents for class 438 subclass 627]  627           Subclass 627 indent level is 5 At least one layer forms a diffusion barrier
[List of Patents for class 438 subclass 628]  628           Subclass 628 indent level is 5 Having adhesion promoting layer
[List of Patents for class 438 subclass 629]  629           Subclass 629 indent level is 5 Diverse conductive layers limited to viahole/plug
[List of Patents for class 438 subclass 630]  630           Subclass 630 indent level is 6 Silicide formation
[List of Patents for class 438 subclass 631]  631           Subclass 631 indent level is 4 Having planarization step
[List of Patents for class 438 subclass 632]  632           Subclass 632 indent level is 5 Utilizing reflow
[List of Patents for class 438 subclass 633]  633           Subclass 633 indent level is 5 Simultaneously by chemical and mechanical means
[List of Patents for class 438 subclass 634]  634           Subclass 634 indent level is 5 Utilizing etch-stop layer
[List of Patents for class 438 subclass 635]  635           Subclass 635 indent level is 4 Insulator formed by reaction with conductor (e.g., oxidation, etc.)
[List of Patents for class 438 subclass 636]  636           Subclass 636 indent level is 4 Including use of antireflective layer
[List of Patents for class 438 subclass 637]  637           Subclass 637 indent level is 4 With formation of opening (i.e., viahole) in insulative layer
[List of Patents for class 438 subclass 638]  638           Subclass 638 indent level is 5 Having viaholes of diverse width
[List of Patents for class 438 subclass 639]  639           Subclass 639 indent level is 5 Having viahole with sidewall component
[List of Patents for class 438 subclass 640]  640           Subclass 640 indent level is 5 Having viahole of tapered shape
[List of Patents for class 438 subclass 641]  641           Subclass 641 indent level is 4 Selective deposition
[List of Patents for class 438 subclass 642]  642           Subclass 642 indent level is 3 Diverse conductors
[List of Patents for class 438 subclass 643]  643           Subclass 643 indent level is 4 At least one layer forms a diffusion barrier
[List of Patents for class 438 subclass 644]  644           Subclass 644 indent level is 4 Having adhesion promoting layer
[List of Patents for class 438 subclass 645]  645           Subclass 645 indent level is 4 Having planarization step
[List of Patents for class 438 subclass 646]  646           Subclass 646 indent level is 5 Utilizing reflow
[List of Patents for class 438 subclass 647]  647           Subclass 647 indent level is 4 Having electrically conductive polysilicon component
[List of Patents for class 438 subclass 648]  648           Subclass 648 indent level is 4 Having refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)
[List of Patents for class 438 subclass 649]  649           Subclass 649 indent level is 5 Silicide
[List of Patents for class 438 subclass 650]  650           Subclass 650 indent level is 4 Having noble group metal (i.e., silver (Ag), gold (Au), platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof)
[List of Patents for class 438 subclass 651]  651           Subclass 651 indent level is 5 Silicide
[List of Patents for class 438 subclass 652]  652           Subclass 652 indent level is 2 Plural layered electrode or conductor
[List of Patents for class 438 subclass 653]  653           Subclass 653 indent level is 3 At least one layer forms a diffusion barrier
[List of Patents for class 438 subclass 654]  654           Subclass 654 indent level is 3 Having adhesion promoting layer
[List of Patents for class 438 subclass 655]  655           Subclass 655 indent level is 3 Silicide
[List of Patents for class 438 subclass 656]  656           Subclass 656 indent level is 3 Having refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)
[List of Patents for class 438 subclass 657]  657           Subclass 657 indent level is 3 Having electrically conductive polysilicon component
[List of Patents for class 438 subclass 658]  658           Subclass 658 indent level is 2 Altering composition of conductor
[List of Patents for class 438 subclass 659]  659           Subclass 659 indent level is 3 Implantation of ion into conductor
[List of Patents for class 438 subclass 660]  660           Subclass 660 indent level is 2 Including heat treatment of conductive layer
[List of Patents for class 438 subclass 661]  661           Subclass 661 indent level is 3 Subsequent fusing conductive layer
[List of Patents for class 438 subclass 662]  662           Subclass 662 indent level is 4 Utilizing laser
[List of Patents for class 438 subclass 663]  663           Subclass 663 indent level is 3 Rapid thermal anneal
[List of Patents for class 438 subclass 664]  664           Subclass 664 indent level is 4 Forming silicide
[List of Patents for class 438 subclass 665]  665           Subclass 665 indent level is 2 Utilizing textured surface
[List of Patents for class 438 subclass 666]  666           Subclass 666 indent level is 2 Specified configuration of electrode or contact
[List of Patents for class 438 subclass 667]  667           Subclass 667 indent level is 3 Conductive feedthrough or through-hole in substrate
[List of Patents for class 438 subclass 668]  668           Subclass 668 indent level is 3 Specified aspect ratio of conductor or viahole
[List of Patents for class 438 subclass 669]  669           Subclass 669 indent level is 2 And patterning of conductive layer
[List of Patents for class 438 subclass 670]  670           Subclass 670 indent level is 3 Utilizing lift-off
[List of Patents for class 438 subclass 671]  671           Subclass 671 indent level is 3 Utilizing multilayered mask
[List of Patents for class 438 subclass 672]  672           Subclass 672 indent level is 3 Plug formation (i.e., in viahole)
[List of Patents for class 438 subclass 673]  673           Subclass 673 indent level is 3 Tapered etching
[List of Patents for class 438 subclass 674]  674           Subclass 674 indent level is 2 Selective deposition of conductive layer
[List of Patents for class 438 subclass 675]  675           Subclass 675 indent level is 3 Plug formation (i.e., in viahole)
[List of Patents for class 438 subclass 676]  676           Subclass 676 indent level is 3 Utilizing electromagnetic or wave energy
[List of Patents for class 438 subclass 677]  677           Subclass 677 indent level is 3 Pretreatment of surface to enhance or retard deposition
[List of Patents for class 438 subclass 678]  678           Subclass 678 indent level is 2 Electroless deposition of conductive layer
[List of Patents for class 438 subclass 679]  679           Subclass 679 indent level is 2 Evaporative coating of conductive layer
[List of Patents for class 438 subclass 680]  680           Subclass 680 indent level is 2 Utilizing chemical vapor deposition (i.e., CVD)
[List of Patents for class 438 subclass 681]  681           Subclass 681 indent level is 3 Of organo-metallic precursor (i.e., MOCVD)
[List of Patents for class 438 subclass 682]  682           Subclass 682 indent level is 2 Silicide
[List of Patents for class 438 subclass 683]  683           Subclass 683 indent level is 3 Of refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)
[List of Patents for class 438 subclass 684]  684           Subclass 684 indent level is 2 Electrically conductive polysilicon
[List of Patents for class 438 subclass 685]  685           Subclass 685 indent level is 2 Refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)
[List of Patents for class 438 subclass 686]  686           Subclass 686 indent level is 2 Noble group metal (i.e., silver (Ag), gold (Au), platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof)
[List of Patents for class 438 subclass 687]  687           Subclass 687 indent level is 2 Copper of copper alloy conductor
[List of Patents for class 438 subclass 688]  688           Subclass 688 indent level is 2 Aluminum or aluminum alloy conductor
[List of Patents for class 438 subclass 689]  689           CHEMICAL ETCHING
[List of Patents for class 438 subclass 690]  690           Subclass 690 indent level is 1 Combined with the removal of material by nonchemical means (e.g., ablating, abrading, etc.)
[List of Patents for class 438 subclass 691]  691           Subclass 691 indent level is 2 Combined mechanical and chemical material removal
[List of Patents for class 438 subclass 692]  692           Subclass 692 indent level is 3 Simultaneous (e.g., chemical-mechanical polishing, etc.)
[List of Patents for class 438 subclass 693]  693           Subclass 693 indent level is 4 Utilizing particulate abradant
[List of Patents for class 438 subclass 694]  694           Subclass 694 indent level is 1 Combined with coating step
[List of Patents for class 438 subclass 695]  695           Subclass 695 indent level is 2 Simultaneous etching and coating
[List of Patents for class 438 subclass 696]  696           Subclass 696 indent level is 2 Coating of sidewall
[List of Patents for class 438 subclass 697]  697           Subclass 697 indent level is 2 Planarization by etching and coating
[List of Patents for class 438 subclass 698]  698           Subclass 698 indent level is 3 Utilizing reflow
[List of Patents for class 438 subclass 699]  699           Subclass 699 indent level is 3 Plural coating steps
[List of Patents for class 438 subclass 700]  700           Subclass 700 indent level is 2 Formation of groove or trench
[List of Patents for class 438 subclass 701]  701           Subclass 701 indent level is 3 Tapered configuration
[List of Patents for class 438 subclass 702]  702           Subclass 702 indent level is 3 Plural coating steps
[List of Patents for class 438 subclass 703]  703           Subclass 703 indent level is 2 Plural coating steps
[List of Patents for class 438 subclass 704]  704           Subclass 704 indent level is 1 Having liquid and vapor etching steps
[List of Patents for class 438 subclass 705]  705           Subclass 705 indent level is 1 Altering etchability of substrate region by compositional or crystalline modification
[List of Patents for class 438 subclass 706]  706           Subclass 706 indent level is 1 Vapor phase etching (i.e., dry etching)
[List of Patents for class 438 subclass 707]  707           Subclass 707 indent level is 2 Utilizing electromagnetic or wave energy
[List of Patents for class 438 subclass 708]  708           Subclass 708 indent level is 3 Photo-induced etching
[List of Patents for class 438 subclass 709]  709           Subclass 709 indent level is 4 Photo-induced plasma etching
[List of Patents for class 438 subclass 710]  710           Subclass 710 indent level is 3 By creating electric field (e.g., plasma, glow discharge, etc.)
[List of Patents for class 438 subclass 711]  711           Subclass 711 indent level is 4 Utilizing multiple gas energizing means
[List of Patents for class 438 subclass 712]  712           Subclass 712 indent level is 4 Reactive ion beam etching (i.e., RIBE)
[List of Patents for class 438 subclass 713]  713           Subclass 713 indent level is 4 Forming tapered profile (e.g., tapered etching, etc.)
[List of Patents for class 438 subclass 714]  714           Subclass 714 indent level is 4 Including change in etch influencing parameter (e.g., energizing power, etchant composition, temperature, etc.)
[List of Patents for class 438 subclass 715]  715           Subclass 715 indent level is 4 With substrate heating or cooling
[List of Patents for class 438 subclass 716]  716           Subclass 716 indent level is 4 With substrate handling (e.g., conveying, etc.)
[List of Patents for class 438 subclass 717]  717           Subclass 717 indent level is 4 Utilizing multilayered mask
[List of Patents for class 438 subclass 718]  718           Subclass 718 indent level is 4 Compound semiconductor
[List of Patents for class 438 subclass 719]  719           Subclass 719 indent level is 4 Silicon
[List of Patents for class 438 subclass 720]  720           Subclass 720 indent level is 4 Electrically conductive material (e.g., metal, conductive oxide, etc.)
[List of Patents for class 438 subclass 721]  721           Subclass 721 indent level is 5 Silicide
[List of Patents for class 438 subclass 722]  722           Subclass 722 indent level is 4 Metal oxide
[List of Patents for class 438 subclass 723]  723           Subclass 723 indent level is 4 Silicon oxide or glass
[List of Patents for class 438 subclass 724]  724           Subclass 724 indent level is 4 Silicon nitride
[List of Patents for class 438 subclass 725]  725           Subclass 725 indent level is 4 Organic material (e.g., resist, etc.)
[List of Patents for class 438 subclass 726]  726           Subclass 726 indent level is 4 Having microwave gas energizing
[List of Patents for class 438 subclass 727]  727           Subclass 727 indent level is 5 Producing energized gas remotely located from substrate
[List of Patents for class 438 subclass 728]  728           Subclass 728 indent level is 6 Using magnet (e.g., electron cyclotron resonance, etc.)
[List of Patents for class 438 subclass 729]  729           Subclass 729 indent level is 4 Using specified electrode/susceptor configuration (e.g., of multiple substrates using barrel-type susceptor, planar reactor configuration, etc.) to generate plasma
[List of Patents for class 438 subclass 730]  730           Subclass 730 indent level is 5 Producing energized gas remotely located from substrate
[List of Patents for class 438 subclass 731]  731           Subclass 731 indent level is 6 Using intervening shield structure
[List of Patents for class 438 subclass 732]  732           Subclass 732 indent level is 4 Using magnet (e.g., electron cyclotron resonance, etc.)
[List of Patents for class 438 subclass 733]  733           Subclass 733 indent level is 3 Using or orientation dependent etchant (i.e., anisotropic etchant)
[List of Patents for class 438 subclass 734]  734           Subclass 734 indent level is 2 Sequential etching steps on a single layer
[List of Patents for class 438 subclass 735]  735           Subclass 735 indent level is 2 Differential etching of semiconductor substrate
[List of Patents for class 438 subclass 736]  736           Subclass 736 indent level is 3 Utilizing multilayered mask
[List of Patents for class 438 subclass 737]  737           Subclass 737 indent level is 3 Substrate possessing multiple layers
[List of Patents for class 438 subclass 738]  738           Subclass 738 indent level is 4 Selectively etching substrate possessing multiple layers of differing etch characteristics
[List of Patents for class 438 subclass 739]  739           Subclass 739 indent level is 5 Lateral etching of intermediate layer (i.e., undercutting)
[List of Patents for class 438 subclass 740]  740           Subclass 740 indent level is 5 Utilizing etch stop layer
[List of Patents for class 438 subclass 741]  741           Subclass 741 indent level is 6 PN junction functions as etch stop
[List of Patents for class 438 subclass 742]  742           Subclass 742 indent level is 4 Electrically conductive material (e.g., metal, conductive oxide, etc.)
[List of Patents for class 438 subclass 743]  743           Subclass 743 indent level is 4 Silicon oxide or glass
[List of Patents for class 438 subclass 744]  744           Subclass 744 indent level is 4 Silicon nitride
[List of Patents for class 438 subclass 745]  745           Subclass 745 indent level is 1 Liquid phase etching
[List of Patents for class 438 subclass 746]  746           Subclass 746 indent level is 2 Utilizing electromagnetic or wave energy
[List of Patents for class 438 subclass 747]  747           Subclass 747 indent level is 2 With relative movement between substrate and confined pool of etchant
[List of Patents for class 438 subclass 748]  748           Subclass 748 indent level is 2 Projection of etchant against a moving substrate or controlling the angle or pattern of projected etchant
[List of Patents for class 438 subclass 749]  749           Subclass 749 indent level is 2 Sequential application of etchant
[List of Patents for class 438 subclass 750]  750           Subclass 750 indent level is 3 To same side of substrate
[List of Patents for class 438 subclass 751]  751           Subclass 751 indent level is 4 Each etch step exposes surface of an adjacent layer
[List of Patents for class 438 subclass 752]  752           Subclass 752 indent level is 2 Germanium
[List of Patents for class 438 subclass 753]  753           Subclass 753 indent level is 2 Silicon
[List of Patents for class 438 subclass 754]  754           Subclass 754 indent level is 2 Electrically conductive material (e.g., metal, conductive oxide, etc.)
[List of Patents for class 438 subclass 755]  755           Subclass 755 indent level is 3 Silicide
[List of Patents for class 438 subclass 756]  756           Subclass 756 indent level is 2 Silicon oxide
[List of Patents for class 438 subclass 757]  757           Subclass 757 indent level is 2 Silicon nitride
[List of Patents for class 438 subclass 758]  758           COATING OF SUBSTRATE CONTAINING SEMICONDUCTOR REGION OR OF SEMICONDUCTOR SUBSTRATE
[List of Patents for class 438 subclass 759]  759           Subclass 759 indent level is 1 Combined with the removal of material by nonchemical means
[List of Patents for class 438 subclass 760]  760           Subclass 760 indent level is 1 Utilizing reflow (e.g., planarization, etc.)
[List of Patents for class 438 subclass 761]  761           Subclass 761 indent level is 1 Multiple layers
[List of Patents for class 438 subclass 762]  762           Subclass 762 indent level is 2 At least one layer formed by reaction with substrate
[List of Patents for class 438 subclass 763]  763           Subclass 763 indent level is 2 Layers formed of diverse composition or by diverse coating processes
[List of Patents for class 438 subclass 764]  764           Subclass 764 indent level is 1 Formation of semi-insulative polycrystalline silicon
[List of Patents for class 438 subclass 765]  765           Subclass 765 indent level is 1 By reaction with substrate
[List of Patents for class 438 subclass 766]  766           Subclass 766 indent level is 2 Implantation of ion (e.g., to form ion amorphousized region prior to selective oxidation, reacting with substrate to form insulative region, etc.)
[List of Patents for class 438 subclass 767]  767           Subclass 767 indent level is 2 Compound semiconductor substrate
[List of Patents for class 438 subclass 768]  768           Subclass 768 indent level is 2 Reaction with conductive region
[List of Patents for class 438 subclass 769]  769           Subclass 769 indent level is 2 Reaction with silicon semiconductive region (e.g., oxynitride formation, etc.)
[List of Patents for class 438 subclass 770]  770           Subclass 770 indent level is 3 Oxidation
[List of Patents for class 438 subclass 771]  771           Subclass 771 indent level is 4 Using electromagnetic or wave energy
[List of Patents for class 438 subclass 772]  772           Subclass 772 indent level is 5 Microwave gas energizing
[List of Patents for class 438 subclass 773]  773           Subclass 773 indent level is 4 In atmosphere containing water vapor (i.e., wet oxidation)
[List of Patents for class 438 subclass 774]  774           Subclass 774 indent level is 4 In atmosphere containing halogen
[List of Patents for class 438 subclass 775]  775           Subclass 775 indent level is 3 Nitridation
[List of Patents for class 438 subclass 776]  776           Subclass 776 indent level is 4 Using electromagnetic or wave energy
[List of Patents for class 438 subclass 777]  777           Subclass 777 indent level is 5 Microwave gas energizing
[List of Patents for class 438 subclass 778]  778           Subclass 778 indent level is 1 Insulative material deposited upon semiconductive substrate
[List of Patents for class 438 subclass 779]  779           Subclass 779 indent level is 2 Compound semiconductor substrate
[List of Patents for class 438 subclass 780]  780           Subclass 780 indent level is 2 Depositing organic material (e.g., polymer, etc.)
[List of Patents for class 438 subclass 781]  781           Subclass 781 indent level is 3 Subsequent heating modifying organic coating composition
[List of Patents for class 438 subclass 782]  782           Subclass 782 indent level is 2 With substrate handling during coating (e.g., immersion, spinning, etc.)
[List of Patents for class 438 subclass 783]  783           Subclass 783 indent level is 2 Insulative material having impurity (e.g., for altering physical characteristics, etc.)
[List of Patents for class 438 subclass 784]  784           Subclass 784 indent level is 3 Introduction simultaneous with deposition
[List of Patents for class 438 subclass 785]  785           Subclass 785 indent level is 2 Insulative material is compound of refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)
[List of Patents for class 438 subclass 786]  786           Subclass 786 indent level is 2 Tertiary silicon containing compound formation (e.g., oxynitride formation, etc.)
[List of Patents for class 438 subclass 787]  787           Subclass 787 indent level is 2 Silicon oxide formation
[List of Patents for class 438 subclass 788]  788           Subclass 788 indent level is 3 Using electromagnetic or wave energy (e.g., photo-induced deposition, plasma, etc.)
[List of Patents for class 438 subclass 789]  789           Subclass 789 indent level is 4 Organic reactant
[List of Patents for class 438 subclass 790]  790           Subclass 790 indent level is 3 Organic reactant
[List of Patents for class 438 subclass 791]  791           Subclass 791 indent level is 2 Silicon nitride formation
[List of Patents for class 438 subclass 792]  792           Subclass 792 indent level is 3 Utilizing electromagnetic or wave energy (e.g., photo-induced deposition, plasma, etc.)
[List of Patents for class 438 subclass 793]  793           Subclass 793 indent level is 4 Organic reactant
[List of Patents for class 438 subclass 794]  794           Subclass 794 indent level is 3 Organic reactant
[List of Patents for class 438 subclass 795]  795           RADIATION OR ENERGY TREATMENT MODIFYING PROPERTIES OF SEMICONDUCTOR REGION OF SUBSTRATE (E.G., THERMAL, CORPUSCULAR, ELECTROMAGNETIC, ETC.)
[List of Patents for class 438 subclass 796]  796           Subclass 796 indent level is 1 Compound semiconductor
[List of Patents for class 438 subclass 797]  797           Subclass 797 indent level is 2 Ordering or disordering
[List of Patents for class 438 subclass 798]  798           Subclass 798 indent level is 1 Ionized irradiation (e.g., corpuscular or plasma treatment, etc.)
[List of Patents for class 438 subclass 799]  799           Subclass 799 indent level is 1 By differential heating
[List of Patents for class 438 subclass 800]  800           MISCELLANEOUS
 
CROSS-REFERENCE ART COLLECTIONS
 
[List of Patents for class 438 subclass 900]  900           BULK EFFECT DEVICE MAKING
[List of Patents for class 438 subclass 901]  901           CAPACITIVE JUNCTION
[List of Patents for class 438 subclass 902]  902           CAPPING LAYER
[List of Patents for class 438 subclass 903]  903           CATALYST AIDED DEPOSITION
[List of Patents for class 438 subclass 904]  904           CHARGE CARRIER LIFETIME CONTROL
[List of Patents for class 438 subclass 905]  905           CLEANING OF REACTION CHAMBER
[List of Patents for class 438 subclass 906]  906           CLEANING OF WAFER AS INTERIM STEP
[List of Patents for class 438 subclass 907]  907           CONTINUOUS PROCESSING
[List of Patents for class 438 subclass 908]  908           Subclass 908 indent level is 1 Utilizing cluster apparatus
[List of Patents for class 438 subclass 909]  909           CONTROLLED ATMOSPHERE
[List of Patents for class 438 subclass 910]  910           CONTROLLING CHARGING STATE AT SEMICONDUCTOR-INSULATOR INTERFACE
[List of Patents for class 438 subclass 911]  911           DIFFERENTIAL OXIDATION AND ETCHING
[List of Patents for class 438 subclass 912]  912           DISPLACING PN JUNCTION
[List of Patents for class 438 subclass 913]  913           DIVERSE TREATMENTS PERFORMED IN UNITARY CHAMBER
[List of Patents for class 438 subclass 914]  914           DOPING
[List of Patents for class 438 subclass 915]  915           Subclass 915 indent level is 1 Amphoteric doping
[List of Patents for class 438 subclass 916]  916           Subclass 916 indent level is 1 Autodoping control or utilization
[List of Patents for class 438 subclass 917]  917           Subclass 917 indent level is 1 Deep level dopants (e.g., gold (Au), chromium (Cr), iron (Fe), nickel (Ni), etc.)
[List of Patents for class 438 subclass 918]  918           Subclass 918 indent level is 1 Special or nonstandard dopant
[List of Patents for class 438 subclass 919]  919           Subclass 919 indent level is 1 Compensation doping
[List of Patents for class 438 subclass 920]  920           Subclass 920 indent level is 1 Controlling diffusion profile by oxidation
[List of Patents for class 438 subclass 921]  921           Subclass 921 indent level is 1 Nonselective diffusion
[List of Patents for class 438 subclass 922]  922           Subclass 922 indent level is 1 Diffusion along grain boundaries
[List of Patents for class 438 subclass 923]  923           Subclass 923 indent level is 1 Diffusion through a layer
[List of Patents for class 438 subclass 924]  924           Subclass 924 indent level is 1 To facilitate selective etching
[List of Patents for class 438 subclass 925]  925           Subclass 925 indent level is 1 Fluid growth doping control (e.g., delta doping, etc.)
[List of Patents for class 438 subclass 926]  926           DUMMY METALLIZATION
[List of Patents for class 438 subclass 927]  927           ELECTROMIGRATION RESISTANT METALLIZATION
[List of Patents for class 438 subclass 928]  928           FRONT AND REAR SURFACE PROCESSING
[List of Patents for class 438 subclass 929]  929           EUTECTIC SEMICONDUCTOR
[List of Patents for class 438 subclass 930]  930           TERNARY OR QUATERNARY SEMICONDUCTOR COMPRISED OF ELEMENTS FROM THREE DIFFERENT GROUPS (E.G., I-III-V, ETC.)
[List of Patents for class 438 subclass 931]  931           SILICON CARBIDE SEMICONDUCTOR
[List of Patents for class 438 subclass 932]  932           BORON NITRIDE SEMICONDUCTOR
[List of Patents for class 438 subclass 933]  933           GERMANIUM OR SILICON OR GE-SI ON III-V
[List of Patents for class 438 subclass 934]  934           SHEET RESISTANCE (I.E., DOPANT PARAMETERS)
[List of Patents for class 438 subclass 935]  935           GAS FLOW CONTROL
[List of Patents for class 438 subclass 936]  936           GRADED ENERGY GAP
[List of Patents for class 438 subclass 937]  937           HILLOCK PREVENTION
[List of Patents for class 438 subclass 938]  938           LATTICE STRAIN CONTROL OR UTILIZATION
[List of Patents for class 438 subclass 939]  939           LANGMUIR-BLODGETT FILM UTILIZATION
[List of Patents for class 438 subclass 940]  940           LASER ABLATIVE MATERIAL REMOVAL
[List of Patents for class 438 subclass 941]  941           LOADING EFFECT MITIGATION
[List of Patents for class 438 subclass 942]  942           MASKING
[List of Patents for class 438 subclass 943]  943           Subclass 943 indent level is 1 Movable
[List of Patents for class 438 subclass 944]  944           Subclass 944 indent level is 1 Shadow
[List of Patents for class 438 subclass 945]  945           Subclass 945 indent level is 1 Special (e.g., metal, etc.)
[List of Patents for class 438 subclass 946]  946           Subclass 946 indent level is 1 Step and repeat
[List of Patents for class 438 subclass 947]  947           Subclass 947 indent level is 1 Subphotolithographic processing
[List of Patents for class 438 subclass 948]  948           Subclass 948 indent level is 1 Radiation resist
[List of Patents for class 438 subclass 949]  949           Subclass 949 indent level is 2 Energy beam treating radiation resist on semiconductor
[List of Patents for class 438 subclass 950]  950           Subclass 950 indent level is 2 Multilayer mask including nonradiation sensitive layer
[List of Patents for class 438 subclass 951]  951           Subclass 951 indent level is 2 Lift-off
[List of Patents for class 438 subclass 952]  952           Subclass 952 indent level is 2 Utilizing antireflective layer
[List of Patents for class 438 subclass 953]  953           MAKING RADIATION RESISTANT DEVICE
[List of Patents for class 438 subclass 954]  954           MAKING OXIDE-NITRIDE-OXIDE DEVICE
[List of Patents for class 438 subclass 955]  955           MELT-BACK
[List of Patents for class 438 subclass 956]  956           MAKING MULTIPLE WAVELENGTH EMISSIVE DEVICE
[List of Patents for class 438 subclass 957]  957           MAKING METAL-INSULATOR-METAL DEVICE
[List of Patents for class 438 subclass 958]  958           PASSIVATION LAYER
[List of Patents for class 438 subclass 959]  959           MECHANICAL POLISHING OF WAFER
[List of Patents for class 438 subclass 960]  960           POROUS SEMICONDUCTOR
[List of Patents for class 438 subclass 961]  961           ION BEAM SOURCE AND GENERATION
[List of Patents for class 438 subclass 962]  962           QUANTUM DOTS AND LINES
[List of Patents for class 438 subclass 963]  963           REMOVING PROCESS RESIDUES FROM VERTICAL SUBSTRATE SURFACES
[List of Patents for class 438 subclass 964]  964           ROUGHENED SURFACE
[List of Patents for class 438 subclass 965]  965           SHAPED JUNCTION FORMATION
[List of Patents for class 438 subclass 966]  966           SELECTIVE OXIDATION OF ION-AMORPHOUSIZED LAYER
[List of Patents for class 438 subclass 967]  967           SEMICONDUCTOR ON SPECIFIED INSULATOR
[List of Patents for class 438 subclass 968]  968           SEMICONDUCTOR-METAL-SEMICONDUCTOR
[List of Patents for class 438 subclass 969]  969           SIMULTANEOUS FORMATION OF MONOCRYSTALLINE AND POLYCRYSTALLINE REGIONS
[List of Patents for class 438 subclass 970]  970           SPECIFIED ETCH STOP MATERIAL
[List of Patents for class 438 subclass 971]  971           STOICHIOMETRIC CONTROL OF HOST SUBSTRATE COMPOSITION
[List of Patents for class 438 subclass 972]  972           STORED CHARGE ERASURE
[List of Patents for class 438 subclass 973]  973           SUBSTRATE ORIENTATION
[List of Patents for class 438 subclass 974]  974           SUBSTRATE SURFACE PREPARATION
[List of Patents for class 438 subclass 975]  975           SUBSTRATE OR MASK ALIGNING FEATURE
[List of Patents for class 438 subclass 976]  976           TEMPORARY PROTECTIVE LAYER
[List of Patents for class 438 subclass 977]  977           THINNING OR REMOVAL OF SUBSTRATE
[List of Patents for class 438 subclass 978]  978           FORMING TAPERED EDGES ON SUBSTRATE OR ADJACENT LAYERS
[List of Patents for class 438 subclass 979]  979           TUNNEL DIODES
[List of Patents for class 438 subclass 980]  980           UTILIZING PROCESS EQUIVALENTS OR OPTIONS
[List of Patents for class 438 subclass 981]  981           UTILIZING VARYING DIELECTRIC THICKNESS
[List of Patents for class 438 subclass 982]  982           VARYING ORIENTATION OF DEVICES IN ARRAY
[List of Patents for class 438 subclass 983]  983           ZENER DIODES
 
FOREIGN ART COLLECTIONS
 
   FOR000          CLASS-RELATED FOREIGN DOCUMENTS
Any foreign patents or non-patent literature from subclasses that have been reclassified have been transferred directly to FOR Collections listed below. These Collections contain ONLY foreign patents or non-patent literature. The parenthetical references in the Collection titles refer to the abolished subclasses from which these Collections were derived.
              METHODS (156/1)
   FOR100          Subclass FOR100 indent level is 1 Etching of semiconductor precursor, substrates, and devices used in an electrical function (156/625.1)
   FOR101          Subclass FOR101 indent level is 2 Measuring, testing, or inspecting (156/626.1)
   FOR102          Subclass FOR102 indent level is 3 By electrical means or of electrical property (156/627.1)
   FOR103          Subclass FOR103 indent level is 2 Altering the etchability of a substrate by alloying, diffusing, or chemical reacting (156/628.1)
   FOR104          Subclass FOR104 indent level is 2 With uniting of preforms (e.g., laminating, etc.) (156/629.1)
   FOR105          Subclass FOR105 indent level is 3 Prior to etching (156/630.1)
   FOR106          Subclass FOR106 indent level is 4 Delamination subsequent to etching (156/631.1)
   FOR107          Subclass FOR107 indent level is 4 With coating (156/632.1)
   FOR108          Subclass FOR108 indent level is 3 Differential etching (156/633.1)
   FOR109          Subclass FOR109 indent level is 4 Metal layer etched (156/634.1)
   FOR110          Subclass FOR110 indent level is 2 With in situ activation or combining of etching components on surface (156/635.1)
   FOR111          Subclass FOR111 indent level is 2 With thin film of etchant between relatively moving substrate and conforming surface (e.g., chemical lapping, etc.) (156/636.1)
   FOR112          Subclass FOR112 indent level is 2 With relative movement between the substrate and a confined pool of etchant (156/637.1)
   FOR113          Subclass FOR113 indent level is 3 With removal of adhered reaction product from substrate (156/638.1)
   FOR114          Subclass FOR114 indent level is 3 With substrate rotation, repeated dipping, or advanced movement (156/639.1)
   FOR115          Subclass FOR115 indent level is 2 Projection of etchant against a moving substrate or controlling the angle or pattern of projected etchant (156/640.1)
   FOR116          Subclass FOR116 indent level is 2 Recycling or regenerating etchant (156/642.1)
   FOR117          Subclass FOR117 indent level is 2 With treatment by high energy radiation or plasma (e.g., ion beam, etc.) (156/643.1)
   FOR118          Subclass FOR118 indent level is 2 Forming or increasing the size of an aperture (156/644.1)
   FOR119          Subclass FOR119 indent level is 2 With mechanical deformation, severing, or abrading of a substrate (156/ 645.1)
   FOR120          Subclass FOR120 indent level is 2 Etchant is a gas (156/646.1)
   FOR121          Subclass FOR121 indent level is 2 Etching according to crystalline planes (156/647.1)
   FOR122          Subclass FOR122 indent level is 2 Etching isolates or modifies a junction in a barrier layer (156/648.1)
   FOR123          Subclass FOR123 indent level is 3 Discrete junction isolated (e.g., mesa formation, etc.) (156/649.1)
   FOR124          Subclass FOR124 indent level is 2 Sequential application of etchant material (156/650.1)
   FOR125          Subclass FOR125 indent level is 3 Sequentially etching the same surface of a substrate (156/651.1)
   FOR126          Subclass FOR126 indent level is 4 Each etching exposes surface of an adjacent layer (156/652.1)
   FOR127          Subclass FOR127 indent level is 5 Etched layer contains silicon (e.g., oxide, nitride, etc.) (156/653.1)
   FOR128          Subclass FOR128 indent level is 2 Differential etching of a substrate (156/654.1)
   FOR129          Subclass FOR129 indent level is 3 Composite substrate (156/655.1)
   FOR130          Subclass FOR130 indent level is 4 Substrate contains metallic element or compound (156/656.1)
   FOR131          Subclass FOR131 indent level is 4 Substrate contains silicon or silicon compound (156/657.1)
   FOR132          Subclass FOR132 indent level is 3 Resist coating (156/659.11)
   FOR133          Subclass FOR133 indent level is 4 Plural resist coating (156/661.11)
   FOR134          Subclass FOR134 indent level is 2 Silicon, germanium, or gallium containing substrate (156/662.1)
   FOR135          MAKING DEVICE HAVING ORGANIC SEMICONDUCTOR COMPONENT (437/1)
   FOR136          MAKING DEVICE RESPONSIVE TO RADIATION (437/2)
   FOR137          Subclass FOR137 indent level is 1 Radiation detectors, e.g., infrared, etc. (437/3)
   FOR138          Subclass FOR138 indent level is 1 Composed of polycrystalline material (437/4)
   FOR139          Subclass FOR139 indent level is 1 Having semiconductor compound (437/5)
   FOR140          MAKING THYRISTOR, E.G., DIAC, TRIAC, ETC. (437/6)
   FOR141          INCLUDING CONTROL RESPONSIVE TO SENSED CONDITION (437/7)
   FOR142          INCLUDING TESTING OR MEASURING (437/8)
   FOR143          INCLUDING APPLICATION OF VIBRATORY FORCE (437/9)
   FOR144          INCLUDING GETTERING (437/10)
   FOR145          Subclass FOR145 indent level is 1 By ion implanting or irradiating (437/11)
   FOR146          Subclass FOR146 indent level is 1 By layers which are coated, contacted, or diffused (437/12)
   FOR147          Subclass FOR147 indent level is 1 By vapor phase surface reaction (437/13)
   FOR148          THERMOMIGRATION (437/14)
   FOR149          INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15)
   FOR150          Subclass FOR150 indent level is 1 Using energy beam to introduce dopant or modify dopant distribution (437/ 16)
   FOR151          Subclass FOR151 indent level is 2 Neutron, gamma ray or electron beam (437/17)
   FOR152          Subclass FOR152 indent level is 2 Ionized molecules (437/18)
   FOR153          Subclass FOR153 indent level is 2 Coherent light beam (437/19)
   FOR154          Subclass FOR154 indent level is 2 Ion beam implantation (437/20)
   FOR155          Subclass FOR155 indent level is 2 Of semiconductor on insulating substrate (437/21)
   FOR156          Subclass FOR156 indent level is 3 Of semiconductor compound (437/22)
   FOR157          Subclass FOR157 indent level is 4 Light emitting diode (LED) (437/23)
   FOR158          Subclass FOR158 indent level is 3 Providing nondopant ion including proton (437/24)
   FOR159          Subclass FOR159 indent level is 3 Providing auxiliary heating (437/25)
   FOR160          Subclass FOR160 indent level is 3 Forming buried region (437/26)
   FOR161          Subclass FOR161 indent level is 3 Including multiple implantations of same region (437/27)
   FOR162          Subclass FOR162 indent level is 4 Through insulating layer (437/28)
   FOR163          Subclass FOR163 indent level is 5 Forming field effect transistor (FET) type device (437/29)
   FOR164          Subclass FOR164 indent level is 4 Using same conductivity type dopant (437/30)
   FOR165          Subclass FOR165 indent level is 4 Forming bipolar transistor (NPN/PNP) (437/31)
   FOR166          Subclass FOR166 indent level is 5 Lateral bipolar transistor (437/32)
   FOR167          Subclass FOR167 indent level is 5 Having dielectric isolation (437/33)
   FOR168          Subclass FOR168 indent level is 4 Forming complementary MOS (metal oxide semiconductor) (437/34)
   FOR169          Subclass FOR169 indent level is 3 Using oblique beam (437/35)
   FOR170          Subclass FOR170 indent level is 3 Using shadow mask (437/36)
   FOR171          Subclass FOR171 indent level is 3 Having projected range less than thickness of dielectrics on substrate (437/37)
   FOR172          Subclass FOR172 indent level is 3 Into shaped or grooved semiconductor substrate (437/38)
   FOR173          Subclass FOR173 indent level is 3 Involving Schottky contact formation (437/39)
   FOR202          Subclass FOR202 indent level is 4 Gate structure constructed of diverse dielectrics (437/42)
   FOR203          Subclass FOR203 indent level is 5 Gate surrounded by dielectric layer, e.g., floating gate, etc. (437/43)
   FOR204          Subclass FOR204 indent level is 5 Adjusting channel dimension (437/44)
   FOR205          Subclass FOR205 indent level is 5 Active step for controlling threshold voltage (437/45)
   FOR185          Subclass FOR185 indent level is 5 Self-aligned (437/41 R)
   FOR186          Subclass FOR186 indent level is 5 With bipolar (437/41 RBP)
   FOR187          Subclass FOR187 indent level is 5 CMOS (437/41 RCM)
   FOR188          Subclass FOR188 indent level is 5 Lightly doped drain (437/41 RLD)
   FOR189          Subclass FOR189 indent level is 5 Memory devices (437/41 RMM)
   FOR190          Subclass FOR190 indent level is 5 Asymmetrical FET (437/41 AS)
   FOR191          Subclass FOR191 indent level is 5 Channel specifics (437/41 CS)
   FOR192          Subclass FOR192 indent level is 5 DMOS/vertical FET (437/41 DM)
   FOR193          Subclass FOR193 indent level is 5 Gate specifics (437/41 GS)
   FOR194          Subclass FOR194 indent level is 5 Junction FET/static induction transistor (437/41 JF)
   FOR195          Subclass FOR195 indent level is 5 Layered channel (437/41 LC)
   FOR196          Subclass FOR196 indent level is 5 Specifics of metallization/contact (437/41 SM)
   FOR197          Subclass FOR197 indent level is 5 Recessed gate (Schottky falls below in SH) (437/41 RG)
   FOR198          Subclass FOR198 indent level is 5 Schottky gate/MESFET (437/41 SH)
   FOR199          Subclass FOR199 indent level is 5 Sidewall (437/41 SW)
   FOR200          Subclass FOR200 indent level is 5 Thin film transistor, inverted (437/41 TFI)
   FOR201          Subclass FOR201 indent level is 5 Thin film transistor (437/41 TFT)
   FOR174          Subclass FOR174 indent level is 4 Forming pair of device regions separated by gate structure, i.e., FET (437/40 R)
   FOR175          Subclass FOR175 indent level is 4 Asymmetrical FET (any asymmetry in S/D profile, gate spacing, etc.) (437/40 AS)
   FOR176          Subclass FOR176 indent level is 4 DMOS/vertical FET (437/40 DM)
   FOR177          Subclass FOR177 indent level is 4 Gate specific (specifics of gate insulator/structure/material/ contact) (437/40 GS)
   FOR178          Subclass FOR178 indent level is 4 Junction FET/static induction transistor (437/40 JF)
   FOR179          Subclass FOR179 indent level is 4 Layered channel (e.g., HEMT, MODFET, 2DEG, heterostructure FETS) (437/40 LC)
   FOR180          Subclass FOR180 indent level is 4 Recessed gate (437/40 RG)
   FOR181          Subclass FOR181 indent level is 4 Schottky gate/MESFET (controls over RG) (437/40 SH)
   FOR182          Subclass FOR182 indent level is 4 Sidewall (not LDD`s) (437/40 SW)
   FOR183          Subclass FOR183 indent level is 4 Thin film transistor inverted/staggered (437/40 TFI)
   FOR184          Subclass FOR184 indent level is 4 Thin film transistor (437/40 TFT)
   FOR206          Subclass FOR206 indent level is 3 Into polycrystalline or polyamorphous regions (437/46)
   FOR207          Subclass FOR207 indent level is 3 Integrating active with passive devices (437/47)
   FOR208          Subclass FOR208 indent level is 3 Forming plural active devices in grid/array, e.g., RAMS/ROMS, etc. (437/48)
   FOR209          Subclass FOR209 indent level is 4 Having multiple-level electrodes (437/49)
   FOR210          Subclass FOR210 indent level is 3 Forming electrodes in laterally spaced relationships (437/50)
   FOR211          Subclass FOR211 indent level is 1 Making assemblies of plural individual devices having community feature, e.g., integrated circuit, electrical connection, etc. (437/51)
   FOR212          Subclass FOR212 indent level is 2 Memory devices (437/52)
   FOR213          Subclass FOR213 indent level is 2 Charge coupled devices (CCD) (437/53)
   FOR214          Subclass FOR214 indent level is 2 Diverse types (437/54)
   FOR215          Subclass FOR215 indent level is 3 Integrated injection logic (I2L) circuits (437/55)
   FOR216          Subclass FOR216 indent level is 3 Plural field effect transistors (CMOS) (437/56)
   FOR217          Subclass FOR217 indent level is 4 Complementary metal oxide having diverse conductivity source and drain regions (437/57)
   FOR218          Subclass FOR218 indent level is 4 Having like conductivity source and drain regions (437/58)
   FOR219          Subclass FOR219 indent level is 3 Including field effect transistor (437/59)
   FOR220          Subclass FOR220 indent level is 3 Including passive device (437/60)
   FOR221          Subclass FOR221 indent level is 1 Including isolation step (437/61)
   FOR222          Subclass FOR222 indent level is 2 By forming total dielectric isolation (437/62)
   FOR223          Subclass FOR223 indent level is 2 By forming vertical isolation combining dielectric and PN junction (437/63)
   FOR224          Subclass FOR224 indent level is 2 Using vertical dielectric (air-gap/insulator) and horizontal PN junction (437/64)
   FOR225          Subclass FOR225 indent level is 3 Grooved air-gap only (437/65)
   FOR226          Subclass FOR226 indent level is 4 V-groove (437/66)
   FOR227          Subclass FOR227 indent level is 3 Grooved and refilled with insulator (437/67)
   FOR228          Subclass FOR228 indent level is 4 V-groove (437/68)
   FOR229          Subclass FOR229 indent level is 3 Recessed oxide by localized oxidation (437/69)
   FOR230          Subclass FOR230 indent level is 4 Preliminary formation of guard ring (437/70)
   FOR231          Subclass FOR231 indent level is 4 Preliminary anodizing (437/71)
   FOR232          Subclass FOR232 indent level is 4 Preliminary etching of groove (437/72)
   FOR233          Subclass FOR233 indent level is 5 Using overhanging oxidation mask and pretreatment of recessed walls (437/ 73)
   FOR234          Subclass FOR234 indent level is 2 Isolation by PN junction only (437/74)
   FOR235          Subclass FOR235 indent level is 3 By diffusion from upper surface only (437/75)
   FOR236          Subclass FOR236 indent level is 3 By up-diffusion from substrate region and down diffusion into upper surface layer (437/76)
   FOR237          Subclass FOR237 indent level is 4 Substrate and epitaxial regions of same conductivity type, i.e., P or N (437/77)
   FOR238          Subclass FOR238 indent level is 3 By etching and refilling with semiconductor material having diverse conductivity (437/78)
   FOR239          Subclass FOR239 indent level is 3 Using polycrystalline region (437/79)
   FOR240          Subclass FOR240 indent level is 1 Shadow masking (437/80)
   FOR241          Subclass FOR241 indent level is 1 Doping during fluid growth of semiconductor material on substrate (437/81)
   FOR242          Subclass FOR242 indent level is 2 Including heat to anneal (437/82)
   FOR243          Subclass FOR243 indent level is 2 Growing single crystal on amorphous substrate (437/83)
   FOR244          Subclass FOR244 indent level is 2 Growing single crystal on single crystal insulator (SOS) (437/84)
   FOR245          Subclass FOR245 indent level is 2 Including purifying stage during growth (437/85)
   FOR246          Subclass FOR246 indent level is 2 Using transitory substrate (437/86)
   FOR247          Subclass FOR247 indent level is 2 Using inert atmosphere (437/87)
   FOR248          Subclass FOR248 indent level is 2 Using catalyst to alter growth process (437/88)
   FOR249          Subclass FOR249 indent level is 2 Growth through opening (437/89)
   FOR250          Subclass FOR250 indent level is 3 Forming recess in substrate and refilling (437/90)
   FOR251          Subclass FOR251 indent level is 4 By liquid phase epitaxy (437/91)
   FOR252          Subclass FOR252 indent level is 3 By liquid phase epitaxy (437/92)
   FOR253          Subclass FOR253 indent level is 2 Specified crystal orientation other than (100) or (111) planes (437/93)
   FOR254          Subclass FOR254 indent level is 2 Introducing minority carrier life time reducing dopant during growth, i.e., deep level dopant Au (Gold), Cr (Cromium), Fe (Iron), Ni (Nickel), etc. (437/94)
   FOR255          Subclass FOR255 indent level is 2 Autodoping control (437/95)
   FOR256          Subclass FOR256 indent level is 3 Compound formed from Group III and Group V elements (437/96)
   FOR257          Subclass FOR257 indent level is 2 Forming buried regions with outdiffusion control (437/97)
   FOR258          Subclass FOR258 indent level is 3 Plural dopants simultaneously outdiffusioned (437/98)
   FOR259          Subclass FOR259 indent level is 2 Growing mono and polycrystalline regions simultaneously (437/99)
   FOR260          Subclass FOR260 indent level is 2 Growing silicon carbide (SiC) (437/100)
   FOR261          Subclass FOR261 indent level is 2 Growing amorphous semiconductor material (437/101)
   FOR262          Subclass FOR262 indent level is 2 Source and substrate in close-space relationship (437/102)
   FOR263          Subclass FOR263 indent level is 3 Group IV elements (437/103)
   FOR264          Subclass FOR264 indent level is 3 Compound formed from Group III and Group V elements (437/104)
   FOR265          Subclass FOR265 indent level is 2 Vacuum growing using molecular beam, i.e., vacuum deposition (437/105)
   FOR266          Subclass FOR266 indent level is 3 Group IV elements (437/106)
   FOR267          Subclass FOR267 indent level is 3 Compound formed from Group III and Group V elements (437/107)
   FOR268          Subclass FOR268 indent level is 2 Growing single layer in multi-steps (437/108)
   FOR269          Subclass FOR269 indent level is 3 Polycrystalline layers (437/109)
   FOR270          Subclass FOR270 indent level is 3 Using modulated dopants or materials, e.g., superlattice, etc. (437/110)
   FOR271          Subclass FOR271 indent level is 3 Using preliminary or intermediate metal layer (437/111)
   FOR272          Subclass FOR272 indent level is 3 Growing by varying rates (437/112)
   FOR273          Subclass FOR273 indent level is 2 Using electric current, e.g., Peltier effect, glow discharge, etc. (437/ 113)
   FOR274          Subclass FOR274 indent level is 2 Using seed in liquid phase (437/114)
   FOR275          Subclass FOR275 indent level is 3 Pulling from melt (437/115)
   FOR276          Subclass FOR276 indent level is 4 And diffusing (437/116)
   FOR277          Subclass FOR277 indent level is 2 Liquid and vapor phase epitaxy in sequence (437/117)
   FOR278          Subclass FOR278 indent level is 2 Involving capillary action (437/118)
   FOR279          Subclass FOR279 indent level is 2 Sliding liquid phase epitaxy (437/119)
   FOR280          Subclass FOR280 indent level is 3 Modifying melt composition (437/120)
   FOR281          Subclass FOR281 indent level is 3 Controlling volume or thickness of growth (437/121)
   FOR282          Subclass FOR282 indent level is 3 Preliminary dissolving substrate surface (437/122)
   FOR283          Subclass FOR283 indent level is 3 With nonlinear slide movement (437/123)
   FOR284          Subclass FOR284 indent level is 3 One melt simultaneously contacting plural substrates (437/124)
   FOR285          Subclass FOR285 indent level is 2 Tipping liquid phase epitaxy (437/125)
   FOR286          Subclass FOR286 indent level is 2 Heteroepitaxy (437/126)
   FOR287          Subclass FOR287 indent level is 3 Multi-color light emitting diode (LED) (437/127)
   FOR288          Subclass FOR288 indent level is 3 Graded composition (437/128)
   FOR289          Subclass FOR289 indent level is 3 Forming laser (437/129)
   FOR290          Subclass FOR290 indent level is 3 By liquid phase epitaxy (437/130)
   FOR291          Subclass FOR291 indent level is 3 Si (Silicon on Ge (Germanium) or Ge (Germanium) on Si (Silicon) (437/131)
   FOR292          Subclass FOR292 indent level is 3 Either Si (Silicon) or Ge (Germanium) layered with or on compound formed from Group III and Group V elements (437/132)
   FOR293          Subclass FOR293 indent level is 3 Compound formed from Group III and Group V elements on diverse Group III and Group V including substituted Group III and Group V compounds (437/133)
   FOR294          Subclass FOR294 indent level is 1 By fusing dopant with substrate, e.g., alloying, etc. (437/134)
   FOR295          Subclass FOR295 indent level is 2 Using flux (437/135)
   FOR296          Subclass FOR296 indent level is 2 Passing electric current through material (437/136)
   FOR297          Subclass FOR297 indent level is 2 With application of pressure to material during fusing (437/137)
   FOR298          Subclass FOR298 indent level is 2 Including plural controlled heating or cooling steps (437/138)
   FOR299          Subclass FOR299 indent level is 2 Including diffusion after fusion step (437/139)
   FOR300          Subclass FOR300 indent level is 2 Including additional material to improve wettability or flow characteristics (437/140)
   FOR301          Subclass FOR301 indent level is 1 Diffusing a dopant (437/141)
   FOR302          Subclass FOR302 indent level is 2 To control carrier lifetime, i.e., deep level dopant Au (Gold), Cr (Chromium), Fe (Iron), Ni (Nickel), etc. (437/142)
   FOR303          Subclass FOR303 indent level is 2 Al (Aluminum) dopant (437/143)
   FOR304          Subclass FOR304 indent level is 2 Li (Lithium) dopant (437/144)
   FOR305          Subclass FOR305 indent level is 2 Including nonuniform heating (437/145)
   FOR306          Subclass FOR306 indent level is 2 To solid state solubility concentration (437/146)
   FOR307          Subclass FOR307 indent level is 2 Using multiple layered mask (437/147)
   FOR308          Subclass FOR308 indent level is 3 Having plural predetermined openings in master mask (437/148)
   FOR309          Subclass FOR309 indent level is 2 Forming partially overlapping regions (437/149)
   FOR310          Subclass FOR310 indent level is 2 Plural dopants in same region, e.g., through same mask opening, etc. (437/150)
   FOR311          Subclass FOR311 indent level is 3 Simultaneously (437/151)
   FOR312          Subclass FOR312 indent level is 2 Plural dopants simultaneously in plural region (437/152)
   FOR313          Subclass FOR313 indent level is 2 Single dopant forming plural diverse regions (437/153)
   FOR314          Subclass FOR314 indent level is 3 Forming regions of different concentrations or different depths (437/154)
   FOR315          Subclass FOR315 indent level is 2 Using metal mask (437/155)
   FOR316          Subclass FOR316 indent level is 2 Outwardly (437/156)
   FOR317          Subclass FOR317 indent level is 2 Laterally under mask (437/157)
   FOR318          Subclass FOR318 indent level is 2 Edge diffusion by using edge portion of structure other than masking layer to mask (437/158)
   FOR319          Subclass FOR319 indent level is 2 From melt (437/159)
   FOR320          Subclass FOR320 indent level is 2 From solid dopant source in contact with substrate (437/160)
   FOR321          Subclass FOR321 indent level is 3 Using capping layer over dopant source to prevent outdiffusion of dopant (437/161)
   FOR322          Subclass FOR322 indent level is 3 Polycrystalline semiconductor source (437/162)
   FOR323          Subclass FOR323 indent level is 3 Organic source (437/163)
   FOR324          Subclass FOR324 indent level is 3 Glassy source or doped oxide (437/164)
   FOR325          Subclass FOR325 indent level is 2 From vapor phase (437/165)
   FOR326          Subclass FOR326 indent level is 3 In plural stages (437/166)
   FOR327          Subclass FOR327 indent level is 3 Zn (Zinc) dopant (437/167)
   FOR328          Subclass FOR328 indent level is 3 Solid source is operative relation with semiconductor material (437/168)
   FOR329          Subclass FOR329 indent level is 4 In capsule type enclosure (437/169)
   FOR330          DIRECTLY APPLYING ELECTRICAL CURRENT (437/170)
   FOR331          Subclass FOR331 indent level is 1 And regulating temperature (437/171)
   FOR332          Subclass FOR332 indent level is 1 Alternating or pulsed current (437/172)
   FOR333          APPLYING CORPUSCULAR OR ELECTROMAGNETIC ENERGY (437/173)
   FOR334          Subclass FOR334 indent level is 1 To anneal (437/174)
   FOR335          FORMING SCHOTTKY CONTACT (437/175)
   FOR336          Subclass FOR336 indent level is 1 On semiconductor compound (437/176)
   FOR337          Subclass FOR337 indent level is 2 Multi-layer electrode (437/177)
   FOR338          Subclass FOR338 indent level is 1 Using platinum group silicide, i.e., silicide of Pt (Platinum), Pd (Palladium), Rh (Rhodium), Ru (Ruthenium), Ir (Iridium), Os (Osmium) (437/178)
   FOR339          Subclass FOR339 indent level is 1 Using metal, i.e., Pt (Platinum), Pd (Palladium), Rh (Rhodium), Ru (Ruthenium), Ir (Iridium), Os (Osmium), Au (Gold), Ag (Silver) (437/179)
   FOR340          MAKING OR ATTACHING ELECTRODE ON OR TO SEMICONDUCTOR, OR SECURING COMPLETED SEMICONDUCTOR TO MOUNTING OR HOUSING (437/180)
   FOR341          Subclass FOR341 indent level is 1 Forming transparent electrode (437/181)
   FOR342          Subclass FOR342 indent level is 1 Forming beam electrode (437/182)
   FOR343          Subclass FOR343 indent level is 1 Forming bump electrode (437/183)
   FOR344          Subclass FOR344 indent level is 1 Electrode formed on substrate composed of elements of Group III and Group V semiconductor compound (437/184)
   FOR345          Subclass FOR345 indent level is 1 Electrode formed on substrate composed of elements of Group II and Group VI semiconductor compound (437/185)
   FOR346          Subclass FOR346 indent level is 1 Single polycrystalline electrode layer on substrate (437/186)
   FOR347          Subclass FOR347 indent level is 1 Single metal layer electrode on substrate (437/187)
   FOR348          Subclass FOR348 indent level is 2 Subsequently fusing, e.g., alloying, sintering, etc. (437/188)
   FOR349          Subclass FOR349 indent level is 1 Forming plural layered electrode (437/189)
   FOR350          Subclass FOR350 indent level is 2 Including central layer acting as barrier between outer layers (437/190)
   FOR351          Subclass FOR351 indent level is 2 Of polysilicon only (437/191)
   FOR352          Subclass FOR352 indent level is 2 Including refractory metal layer of Ti (Titanium), Zr (Zirconium), Hf (Hafnium), V (Vanadium), Nb (Niobium), Ta (Tantalum), Cr (Chromium), Mo (Molybdenum), W (Tungsten) (437/192)
   FOR353          Subclass FOR353 indent level is 2 Including polycrystalline silicon layer (437/193)
   FOR354          Subclass FOR354 indent level is 2 Including Al (Aluminum) layer (437/194)
   FOR355          Subclass FOR355 indent level is 2 Including layer separated by insulator (437/195)
   FOR356          Subclass FOR356 indent level is 1 Forming electrode of alloy or electrode of a compound of Si (Silicon) (437/196)
   FOR357          Subclass FOR357 indent level is 2 Al (Aluminum) alloy (437/197)
   FOR358          Subclass FOR358 indent level is 3 Including Cu (Copper) (437/198)
   FOR359          Subclass FOR359 indent level is 3 Including Si (Silicon) (437/199)
   FOR360          Subclass FOR360 indent level is 2 Silicide of Ti (Titanium), Zr (Zirconium), Hf (Hafnium), V (Vanadium), Nb (Niobium), Ta (Tantalum), Cr (Chromium), Mo (Molybdenum), W (Tungsten), (437/200)
   FOR361          Subclass FOR361 indent level is 2 Of plantinum metal group Ru (Ruthenium), Rh (Rhodium), Pd (Palladium), Os (Osmium), Ir (Iridium), Pt (Platinum) (437/201)
   FOR362          Subclass FOR362 indent level is 2 By fusing metal with semiconductor (alloying) (437/202)
   FOR363          Subclass FOR363 indent level is 1 Depositing electrode in preformed recess in substrate (437/203)
   FOR364          Subclass FOR364 indent level is 1 Including positioning of point contact (437/204)
   FOR365          Subclass FOR365 indent level is 1 Making plural devices (437/205)
   FOR366          Subclass FOR366 indent level is 2 Using strip lead frame (437/206)
   FOR367          Subclass FOR367 indent level is 3 And encapsulating (437/207)
   FOR368          Subclass FOR368 indent level is 2 Stacked array, e.g., rectifier, etc. (437/208)
   FOR369          Subclass FOR369 indent level is 1 Securing completed semiconductor to mounting, housing or external lead (437/209)
   FOR370          Subclass FOR370 indent level is 2 Including contaminant removal (437/210)
   FOR371          Subclass FOR371 indent level is 2 Utilizing potting or encapsulating material only to surround leads and device to maintain position, i.e. without housing (437/211)
   FOR372          Subclass FOR372 indent level is 3 Including application of pressure (437/212)
   FOR373          Subclass FOR373 indent level is 3 Glass material (437/213)
   FOR374          Subclass FOR374 indent level is 2 Utilizing header (molding surface means) (437/214)
   FOR375          Subclass FOR375 indent level is 2 Insulating housing (437/215)
   FOR376          Subclass FOR376 indent level is 3 Including application of pressure (437/216)
   FOR377          Subclass FOR377 indent level is 3 And lead frame (437/217)
   FOR378          Subclass FOR378 indent level is 3 Ceramic housing (437/218)
   FOR379          Subclass FOR379 indent level is 3 Including encapsulating (437/219)
   FOR380          Subclass FOR380 indent level is 2 Lead frame (437/220)
   FOR381          Subclass FOR381 indent level is 2 Metallic housing (437/221)
   FOR382          Subclass FOR382 indent level is 3 Including application of pressure (437/222)
   FOR383          Subclass FOR383 indent level is 3 Including glass support base (437/223)
   FOR384          Subclass FOR384 indent level is 3 Including encapsulating (437/224)
   FOR385          INCLUDING COATING OR MATERIAL REMOVAL, E.G., ETCHING, GRINDING, ETC. (437/ 225)
   FOR386          Subclass FOR386 indent level is 1 Substrate dicing (437/226)
   FOR387          Subclass FOR387 indent level is 2 With a perfecting coating (437/227)
   FOR388          Subclass FOR388 indent level is 1 Coating and etching (437/228)
   FOR389          Subclass FOR389 indent level is 1 Of radiation resist layer (437/229)
   FOR390          Subclass FOR390 indent level is 1 By immersion metal plating from solution, i.e., electroless plating (437/230)
   FOR391          Subclass FOR391 indent level is 1 By spinning (437/231)
   FOR392          Subclass FOR392 indent level is 1 Elemental Se (Selenium) substrate or coating (437/232)
   FOR393          Subclass FOR393 indent level is 1 Of polycrystalline semiconductor material on substrate (437/233)
   FOR394          Subclass FOR394 indent level is 2 Semiconductor compound or mixed semiconductor material (437/234)
   FOR395          Subclass FOR395 indent level is 1 Of a dielectric or insulative material (437/235)
   FOR396          Subclass FOR396 indent level is 2 Containing Group III atom (437/236)
   FOR397          Subclass FOR397 indent level is 3 By reacting with substrate (437/237)
   FOR398          Subclass FOR398 indent level is 2 Monoxide or dioxide or Ge (Germanium) or Si (Silicon) (437/238)
   FOR399          Subclass FOR399 indent level is 3 By reacting with substrate (437/239)
   FOR400          Subclass FOR400 indent level is 3 Doped with impurities (437/240)
   FOR401          Subclass FOR401 indent level is 2 Si (Silicon) and N (Nitrogen) (437/241)
   FOR402          Subclass FOR402 indent level is 3 By chemical reaction with substrate (437/242)
   FOR403          Subclass FOR403 indent level is 2 Directly on semiconductor substrate (437/243)
   FOR404          Subclass FOR404 indent level is 3 By chemical conversion of substrate (437/244)
   FOR405          Subclass FOR405 indent level is 1 Comprising metal layer (437/245)
   FOR406          Subclass FOR406 indent level is 2 On metal (437/246)
   FOR407          TEMPERATURE TREATMENT MODIFYING PROPERTIES OF SEMICONDUCTOR, E.G., ANNEALING, SINTERING, ETC. (437/247)
   FOR408          Subclass FOR408 indent level is 1 Heating and cooling (437/248)
   FOR409          INCLUDING SHAPING (437/249)
   FOR410          MISCELLANEOUS (437/250)
   FOR411          UTILIZING PROCESS EQUIVALENTS OR OPTIONS (437/900)
   FOR412          MAKING PRESSURE SENSITIVE DEVICE (437/901)
   FOR413          MAKING DEVICE HAVING HEAT SINK (437/902)
   FOR414          MAKING THERMOPILE (437/903)
   FOR415          MAKING DIODE (437/904)
   FOR416          Subclass FOR416 indent level is 1 Light emmitting diode (437/905)
   FOR417          Subclass FOR417 indent level is 2 Mounting and contact (437/906)
   FOR418          LASER PROCESSING OF FIELD EFFECT TRANSISTOR (FET) (437/907)
   FOR419          LASER PROCESSING OF TRANSISTOR (437/908)
   FOR420          MAKING TRANSISTOR ONLY (437/909)
   FOR421          MAKING JOSEPHSON JUNCTION DEVICE (437/910)
   FOR422          MAKING JUNCTION-FIELD EFFECT TRANSISTOR (J-FET) OR STATIC INDUCTION THYRSISTOR (SIT) DEVICE (437/911)
   FOR423          MAKING METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MESFET) DEVICE ONLY (437/912)
   FOR424          MAKING METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET) DEVICE (437/913)
   FOR425          MAKING NON-EPITAXIAL DEVICE (437/914)
   FOR426          MAKING VERTICALLY STACKED DEVICES (3-DIMENSIONAL STRUCTURE) (437/915)
   FOR427          MAKING PHOTOCATHODE OR VIDICON (437/916)
   FOR428          MAKING LATERAL TRANSISTOR (437/917)
   FOR429          MAKING RESISTOR (437/918)
   FOR430          MAKING CAPACITOR (437/919)
   FOR431          MAKING SILICON-OXIDE-NITRIDE-OXIDE ON SILICON (SONOS) DEVICE (437/920)
   FOR432          MAKING STRAIN GAGE (437/921)
   FOR433          MAKING FUSE OR FUSABLE DEVICE (437/922)
   FOR434          WITH REPAIR OR RECOVERY OF DEVICE (437/923)
   FOR435          HAVING SUBSTRATE OR MASK ALIGNING FEATURE (437/924)
   FOR436          SUBSTRATE SUPPORT OR CAPSULE CONSTRUCTION (437/925)
   FOR437          CONTINUOUS PROCESSING (437/926)
   FOR438          FORMING HOLLOW BODIES AND ENCLOSED CAVITIES (437/927)
   FOR439          ENERGY BEAM TREATING RADIATION RESIST ON SEMICONDUCTOR (437/928)
   FOR440          RADIATION ENHANCED DIFFUSION (R.E.D.) (437/929)
   FOR441          ION BEAM SOURCE AND GENERATION (437/930)
   FOR442          IMPLANTATION THROUGH MASK (437/931)
   FOR443          RECOIL IMPLANTATION (437/932)
   FOR444          DUAL SPECIES IMPLANTATION OF SEMICONDUCTOR (437/933)
   FOR445          DOPANT ACTIVATION PROCESS (437/934)
   FOR446          BEAM WRITING OF PATTERNS (437/935)
   FOR447          BEAM PROCESSING OF COMPOUND SEMICONDUCTOR DEVICE (437/936)
   FOR448          HYDROGEN PLASMA TREATMENT OF SEMICONDUCTOR DEVICE (437/937)
   FOR449          MAKING RADIATION RESISTANT DEVICE (437/938)
   FOR450          DEFECT CONTROL OF SEMICONDUCTOR WAFER (PRETREATMENT) (437/939)
   FOR451          SELECTIVE OXIDATION OF ION AMORPHOUSIZED LAYERS (437/940)
   FOR452          CONTROLLING CHARGING STATE AT SEMICONDUCTOR-INSULATOR INTERFACE (437/941)
   FOR453          INCOHERENT LIGHT PROCESSING (437/942)
   FOR454          THERMALLY ASSISTED BEAM PROCESSING (437/943)
   FOR455          UTILIZING LIFT OFF (437/944)
   FOR456          STOICHIOMETRIC CONTROL OF HOST SUBSTRATE COMPOSITION (437/945)
   FOR457          SUBSTRATE SURFACE PREPARATION (437/946)
   FOR458          FORMING TAPERED EDGES ON SUBSTRATE OR ADJACENT LAYERS (437/947)
   FOR459          MOVABLE MASK (437/948)
   FOR460          CONTROLLED ATMOSPHERE (437/949)
   FOR461          SHALLOW DIFFUSION (437/950)
   FOR462          AMPHOTERIC DOPING (437/951)
   FOR463          CONTROLLING DIFFUSION PROFILE BY OXIDATION (437/952)
   FOR464          DIFFUSION OF OVERLAPPING REGIONS (COMPENSATION) (437/953)
   FOR465          VERTICAL DIFFUSION THROUGH A LAYER (437/954)
   FOR466          NONSELECTIVE DIFFUSION (437/955)
   FOR467          DISPLACING P-N JUNCTION (437/956)
   FOR468          ELECTROMIGRATION (437/957)
   FOR469          SHAPED JUNCTION FORMATION (437/958)
   FOR470          USING NONSTANDARD DOPANT (437/959)
   FOR471          WASHED EMITTER PROCESS (437/960)
   FOR472          EMITTER DIP PREVENTION (OR UTILIZATION) (437/961)
   FOR473          UTILIZING SPECIAL MASKS (CARBON, ETC.) (437/962)
   FOR474          LOCALIZED HEATING CONTROL DURING FLUID GROWTH (437/963)
   FOR475          FLUID GROWTH INVOLVING VAPOR-LIQUID-SOLID STAGES (437/964)
   FOR476          FLUID GROWTH OF COMPOUNDS COMPOSED OF GROUPS II, IV, OR VI ELEMENTS (437/965)
   FOR477          FORMING THIN SHEETS (437/966)
   FOR478          PRODUCING POLYCRYSTALLINE SEMICONDUCTOR MATERIAL (437/967)
   FOR479          SELECTIVE OXIDATION OF POLYCRYSTALLINE LAYER (437/968)
   FOR480          FORMING GRADED ENERGY GAP LAYERS (437/969)
   FOR481          DIFFERENTIAL CRYSTAL GROWTH (437/970)
   FOR482          FLUID GROWTH DOPING CONTROL (437/971)
   FOR483          UTILIZING MELT-BACK (437/972)
   FOR484          SOLID PHASE EPITAXIAL GROWTH (437/973)
   FOR485          THINNING OR REMOVAL OF SUBSTRATE (437/974)
   FOR486          DIFFUSION ALONG GRAIN BOUNDARIES (437/975)
   FOR487          CONTROLLING LATTICE STRAIN (437/976)
   FOR488          UTILIZING ROUGHENED SURFACE (437/977)
   FOR489          UTILIZING MULTIPLE DIELECTRIC LAYERS (437/978)
   FOR490          UTILIZING THICK-THIN OXIDE FORMATION (437/979)
   FOR491          FORMING POLYCRYSTALLINE SEMICONDUCTOR PASSIVATION (437/980)
   FOR492          PRODUCING TAPERED ETCHING (437/981)
   FOR493          REFLOW OF INSULATOR (437/982)
   FOR494          OXIDATION OF GATE OR GATE CONTACT LAYER (437/983)
   FOR495          SELF-ALIGNING FEATURE (437/984)
   FOR496          DIFFERENTIAL OXIDATION AND ETCHING (437/985)
   FOR497          DIFFUSING LATERALLY AND ETCHING (437/986)
   FOR498          DIFFUSING DOPANTS IN COMPOUND SEMICONDUCTOR (437/987)

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